A pixel includes an emission area and a non-emission area; first to fourth alignment electrodes spaced apart from each other in the emission area and an area of the non-emission area; an insulating layer disposed on the first to fourth alignment electrodes; first to fourth bridge patterns disposed on the insulating layer in the non-emission area; a bank disposed on the first to fourth bridge patterns in the non-emission area, and including a first opening and a second opening; first and second pixel electrodes disposed in the emission area; and light emitting elements disposed in the emission area, and electrically connected with the first and second pixel electrodes. The first alignment electrode, the first bridge pattern, and the first pixel electrode are electrically connected to each other. The third alignment electrode, the third bridge pattern, and the second pixel electrode are electrically connected to each other.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni.sup.2+, a perovskite type phosphor doped with Ni.sup.2+ and Cr.sup.3+, and a garnet type phosphor doped with Ni.sup.2+ and Cr.sup.3+.

A light-emitting element includes: a first n-type nitride semiconductor layer; a first light-emitting layer located on the first n-type nitride semiconductor layer; a p-type GaN layer located on the first light-emitting layer; an n-type GaN layer located on the p-type GaN layer and doped with an n-type impurity at an impurity concentration higher than that of the first n-type nitride semiconductor layer; a non-doped GaN layer located between the p-type GaN layer and the n-type GaN layer, a thickness of the non-doped GaN layer being not more than a width of a depletion layer formed by the n-type and p-type GaN layers; a second n-type nitride semiconductor layer located on the n-type GaN layer and doped with an n-type impurity; a second light-emitting layer located on the second n-type nitride semiconductor layer; and a p-type nitride semiconductor layer located on the second light-emitting layer and doped with a p-type impurity.

A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, the second mesa comprising a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, c) electrochemically porosifying the second mesa, d) producing stacks on the mesas to form LED structures emitting at various wavelengths.

A display device may include a display area including pixel areas each including an emission area, a non-display area, and a pixel disposed in each of the pixel areas. The pixel may include a first electrode, a second electrode spaced apart from the first electrode and surrounding a periphery of the first electrode, a third electrode spaced apart from the second electrode and surrounding a periphery of the second electrode, a fourth electrode spaced apart from the third electrode and surrounding a periphery of the third electrode, light emitting elements disposed between the first to fourth electrodes, and first and second conductive lines disposed under the first to fourth electrodes with an insulating layer disposed therebetween. The first conductive line may be electrically connected to the first electrode, and the second conductive line may be electrically connected to the fourth electrode.

A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.

A pixel includes first and second sub-pixel areas adjacent to each other in a first direction; first and second electrodes disposed in each of the first and the second sub-pixel areas, and spaced apart from each other; light emitting elements disposed between the first and the second electrodes in each of the first and the second sub-pixel areas; a first driving transistor disposed in the first sub-pixel area, and electrically connected to the first electrode; and a second driving transistor disposed in the second sub-pixel area, and electrically connected to the first electrode. The first electrode of the first sub-pixel area and the first electrode of the second sub-pixel area are electrically disconnected from each other, and the second electrode of the first sub-pixel area and the second electrode of the second sub-pixel area are electrically connected to each other.

A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.