The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.

The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

Disclosed are a production method for a nitride fluorescent material, a nitride fluorescent material and a light emitting device. The production method is for producing a nitride fluorescent material that has, as a fluorescent material core, a calcined body having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al, and optionally Si, and N, and the method includes preparing a calcined body having the above-mentioned composition, bringing the calcined body into contact with a fluorine-containing substance, and subjecting it to a first heat treatment at a temperature of 100° C. or higher and 500° C. or lower to form a fluoride-containing first film on the calcined body, and forming on the calcined body, a second film that contains a metal oxide containing at least one metal element M2 selected from the group consisting of Si, Al, Ti, Zr, Sn and Zn and subjecting it to a second heat treatment at a temperature in a range of higher than 250° C. and 500° C. or lower.

The disclosure provides a full-color light emitting device and a display module. A light emitting layer, a refractive layer, a spacer layer and a light processing layer are included. The refractive layer is disposed above the light emitting layer, the spacer layer is disposed above the refractive layer, and the light processing layer is disposed above the spacer layer. The light emitting layer includes a first light emitting part, a second light emitting part and a third light emitting part. The light processing layer includes a first light processing part, a second light processing part, and a third light processing part, and a baffle wall is disposed between any two adjacent light processing parts in the first light processing part, the second light processing part and the third light processing part. A light refractive index of the refractive layer is greater than a light refractive index of the spacer layer.

A display device may include a substrate including a display area and a non-display area; and a plurality of pixels disposed in the display area, the plurality of pixels each including an emission area and a non-emission area. Each of the plurality of pixels may include at least one light emitting element in the emission area; a first pixel electrode and a second pixel electrode electrically connected to the at least one light emitting element; a bank including a first opening corresponding to the emission area; a color conversion layer disposed in the emission area to correspond to the at least one light emitting element; a barrier layer disposed on the bank and the color conversion layer; and a low refractive layer disposed on the barrier layer. The barrier layer may include silicon oxide (SiO.sub.x) having cured polysilazane.

A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 μm in a top view.

Disclosed in the present application are a quantum dot LED, a manufacturing method thereof, and a display device, belonging to the technical field of LED light sources. The quantum dot LED includes an LED support, an LED chip, a filling layer, and a quantum dot layer, where the LED support comprises a chamber; the LED chip is arranged on a bottom surface of the chamber; the filling layer covers the bottom surface of the chamber and the LED chip, and is engaged with walls of the chamber; and the quantum dot layer is arranged at an opening on a top surface of the chamber, a light incident side of the quantum dot layer abuts against a surface of the filling layer away from the bottom surface of the chamber, and a shortest distance h between the LED chip and the quantum dot layer meets h≥0.03 mm.

A light emitting device package including a substrate, a light emitting structure including a plurality of epitaxial stacks sequentially stacked on the substrate configured to emit light having different wavelength bands from each other, the light emitting structure having a light emitting area defined by the epitaxial stacks, a plurality of bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, a molding layer covering a side surface and an upper surface of the light emitting structure, a plurality of fan-out lines disposed on the molding layer and connected to the light emitting structure through the bump electrodes, and an insulating layer disposed on the fan-out lines and exposing a portion of the fan-out lines, in which the exposed portion of the fan-out lines does not overlap with the light emitting area.

Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly packaged LED devices are disclosed. LED packages are disclosed herein with arrangements of LED chips and corresponding lumiphoric regions that are configured to provide overall light emissions having improved color mixing and emission uniformity. LED packages are further disclosed herein that are configured to be tunable between different colors or correlated color temperatures (CCTs) while providing improved color mixing and emission uniformity. Arrangements may include differing lumiphoric regions that are arranged with various alternating patterns including one or more intersecting lines, rows of alternating lumiphoric regions, patterns that alternate in at least two directions, and checkerboard patterns.

A structure and a method for producing a structure are disclosed. In an embodiment a structure includes at least one semiconductor structure comprising at least one semiconductor nanocrystal and a high-density element for increasing a density of the structure, wherein a density of the high-density element is greater than a density of silica, and wherein the structure is configured to emit light.