A display device including a blue light source (A), a wavelength conversion layer (B), and a light absorption layer (C), wherein the wavelength conversion layer (B) has a first wavelength conversion layer (B1) containing a compound (Q1) that absorbs blue and emits red light, and a second wavelength conversion layer (B2) containing a compound (Q2) that absorbs blue and emits green light, and the display device satisfies 0.7≤X1 and 0.7≤X2.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

A display device includes a substrate, a first light-emitting unit, a second light-emitting unit, a first light conversion unit, a second light conversion unit, a first buffer layer, a second buffer layer, and a sidewall buffer layer. The first light-emitting unit and the second light-emitting unit are disposed on the substrate. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit and has a first curved bottom surface. The second buffer layer is disposed between the second light conversion unit and the second light-emitting unit and has a second curved bottom surface. The sidewall buffer layer directly contacts the first light conversion unit and the second light conversion. A width of the first curved bottom surface is different from a width of the second curved bottom surface.

A light apparatus includes at least one elongated substrate mounted with a first light emitted diode covered with a first fluorescent layer and a second light emitted diode not covered with fluorescent layer. The light apparatus also has a driver circuit supplying a driving current to the first light emitted diode and the second light emitted diode and a control circuit.

A micro LED display device includes an epitaxial structure layer, a connection layer, a light conversion layer and a transparent layer. The epitaxial structure layer includes a plurality of micro LEDs disposed apart from each other. The connection layer is disposed at one side of the epitaxial structure layer away from the micro LEDs. The light conversion layer is fixed on the epitaxial structure layer through the connection layer and includes a plurality of light conversion portions. Each of the light conversion portions corresponds to one of the micro LEDs. The transparent layer is disposed at one side of the light conversion layer away from the epitaxial structure layer. The ratio of the thickness of the transparent layer to the width of each light conversion portion is between 0.1 and 40. A manufacturing method of the micro LED display device is also provided.

A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

A display device is provided, which includes a first substrate, a first display structure, a second display structure, a first optical film, a second optical film, a first adhesive layer and a second adhesive layer. The first and second display structures are disposed on the first substrate. The first display structure is disposed between the first substrate and the first optical film. The second display structure is disposed between the first substrate and the second optical film. The first and second optical films are separated. The first adhesive layer is disposed between the first display structure and first optical film. The second adhesive layer is disposed between the second display structure and second optical film. The first and second display structures are different from each other and are selected from a liquid-crystal display, an organic light-emitting diode display, an inorganic light-emitting diode display or a laser display.

Provided are a display panel, a preparation method thereof and a display device. The display panel includes a substrate; a driving circuit layer, where the driving circuit layer is disposed on a side of the substrate, and includes a plurality of driving circuits; and an LED element layer, where the LED element layer is disposed on a side of the driving circuit layer facing away from the substrate, and includes a plurality of micro-LED elements, where each of the plurality of micro-LED elements is electrically connected to a respective one of the plurality of driving circuits through a via hole.

A illumination device comprises an excitation light source, a first fluorescent material that converts the wavelength of light emitted from the excitation light source and emits light having a light emission peak wavelength in a range of 780 nm or more and 1,600 nm or less, and a cut filter that blocks light in a wavelength range of 870 nm or less, wherein the first fluorescent material contains a fluorescent material having a composition of rare earth aluminate containing Ce and Nd.