Patent classifications
H01L33/504
LIGHT EMITTING DIODE FOR IMPLEMENTING WHITE LIGHT
A light emitting diode according to an embodiment of the present disclosure includes a first conductivity type semiconductor layer, an active region including a plurality of active layers, a pre-strained layer disposed between the first conductivity type semiconductor layer and the active region, and including a V-pit generation layer (VGL), and a second conductivity type semiconductor layer disposed on the active region, in which the VGL has a thickness within a range of 250 nm to 350 nm.
Light emitting device including RGB light emitting diodes and phosphor
A light emitting device including a plurality light emitting diodes configured to produce a primary light; a wavelength conversion means configured to at least partially convert the primary light into secondary light having peak emission wavelength ranges between 450 nm and 520 nm, between 500 nm and 570 nm, and between 570 nm and 680 nm; and a molded part to enclose the light emitting diodes and the wavelength conversion means.
DISPLAY DEVICE USING MICRO LED, AND METHOD FOR MANUFACTURING SAME
A semiconductor light emitting element for a display device can include a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure, in which the light extraction structure includes a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer, and at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles.
Light-emitting device
A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 4500 K to less than 5700 K; and 1.35 to 1.65 when the light-emitting device emits light with a correlated color temperature of 5700 K to 7200 K.
Micro light-emitting diode displays having nanophosphors
Micro light-emitting diode displays having nanophosphors, and methods of fabricating micro light-emitting diode displays having nanophosphors, are described. In an example, a pixel structure includes a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon. A plurality of micro light emitting diode devices is in a second dielectric layer above the first dielectric layer, including a first blue micro light emitting diode device, a second blue micro light emitting diode device, and a green micro light emitting diode device. A transparent conducting oxide layer is disposed on the plurality of micro light emitting diode devices and on the second dielectric layer. A phosphor layer is on the transparent conducting oxide layer at a location vertically aligned with the first blue micro light emitting diode device but not at a location vertically aligned with the second blue micro light emitting diode device.
Light generating system comprising an elongated luminescent body
The invention provides an elongated luminescent body (100) comprising an elongated support (170) and a coating layer (180), wherein the elongated luminescent body (100) further comprises a body axis (BA), and a length parameter P of a body dimension perpendicular to the body axis (BA), wherein the length parameter P is selected from height (H), width (W) and diameter (D), wherein: —the elongated support (170) comprises a support material (171), a support material index of refraction n1, wherein the support material index of refraction n1 is at least 1.4, a support surface (172), and a support length (L1); —the coating layer (180) is configured on at least part of the support surface (172) over at least part of the support length (L1), wherein the coating layer (180) comprises a coating layer material (181), a coating layer index of refraction n2, wherein coating layer index of refraction n2 is at least 1.4, and a coating layer thickness (d1), wherein the coating layer material (181) has a composition different from the support material (171), wherein the coating layer material (181) comprises a luminescent material (120) configured to absorb one or more of UV radiation and visible light, and to convert into luminescent material light (8) having one or more wavelengths in one or more of the visible and the infrared; and —the support material (171) is transmissive for the luminescent material light (8), and (i) −0.2≤n1−n2≤0.2 and (ii) d1/P≤0.25 apply.
Quantum Dot Films Utilizing Multi-Phase Resins
Multi-phase polymer films containing quantum dots (QDs) are described herein. The films have domains of primarily hydrophobic polymer and domains of primarily hydrophilic polymer. QDs, being generally more stable within a hydrophobic matrix, are dispersed primarily within the hydrophobic domains of the films. The hydrophilic domains tend to be effective at excluding oxygen.
LIGHT EMITTING MODULE
A light emitting module includes: a first light source comprising a first light emitting element configured to emit first light, and a first wavelength conversion member configured to convert a wavelength of a portion of the first light and to emit second light, such that the first light source is configured to output light that includes the first light and the second light; a first lens on which the light output from the first light source is incident; a drive unit configured to change a distance between the first lens and the first light source so as to change an amount of outgoing second light from the first lens; a second light source configured to output light having a chromaticity that is different from that of the light output from the first light source; and a second lens on which the light output from the second light source is incident.
SELF-LUMINOUS DISPLAY DEVICE
A self-luminous display device includes a wavelength selective absorption filter containing a resin and a dye including dye A, which has a main absorption wavelength band (WB) at a wavelength of 390 to 435 nm, a dye B, which has a main absorption WB at a wavelength of 500 to 520 nm, and a dye C, which has a main absorption WB at a wavelength of 580 to 620 nm, and a light emitting diode source, the wavelength selective absorption filter satisfies a definition according to Expression (I): T.sub.min (500 to 520)−T.sub.min (580 to 620)>0%; where T.sub.min indicates a minimum transmittance (%) at the cited wavelength, and a self-luminous display device in which the wavelength selective filter has a specific gas barrier layer directly disposed on at least one surface of the wavelength selective absorption filter.
DISPLAY DEVICE AND ELECTRONIC DEVICE
Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.