An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

Provided is a light emitting device that includes a light emitting element having a light emission peak wavelength ranging from 380 nm to 490 nm, and a fluorescent material excited by light from the light emitting element and emitting light having at a light emission peak wavelength ranging from 580 nm or more to less than 680 nm. The light emitting device emits light having a ratio R/B of a photon flux density R to a photon flux density B ranging from 2.0 to 4.0 and a ratio R/FR of the photon flux density R to a photon flux density FR ranging from 0.7 to 13.0, the photon flux density R being in a wavelength range of 620 nm or more and less than 700 nm, the photon flux density B being in a wavelength range of 380 nm or more and 490 nm or less, and the photon flux density FR being in a wavelength range of 700 nm or more and 780 nm or less.

The invention provides a lighting device (10) comprising a light source (100) configured to generate light source light (101) and a light converter element (200), wherein the light converter element (200) comprises a light transmissive matrix (205), wherein the light transmissive matrix (205) comprises: (i) a first luminescent material (210) configured to convert at least part of one or more of (a) the light source light (101) and (b) optionally a second luminescent material light (221) from an optional second luminescent material (220) into a first luminescent material light (211); and (ii) a thermo-responsive liquid crystalline compound (250); wherein the light transmissive matrix (205) is configured in thermal contact with the light source (100), and wherein the lighting device (10) is further configured to provide lighting device light (11) comprising said light source light (101), said first luminescent material light (210) and optionally said second luminescent material light (221), and wherein said light converter element is arranged for changing one or more of the color and color temperature of the lighting device light with the electrical power provided to the light source.

The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength converting layer covering the LED chip. The wavelength converting layer contains red phosphor, which has lower amount in edge portion than in center portion. It is possible to avoid direct or indirect excitation for generating red light in edge portion of the LED chip by adjusting the amount of red phosphor in edge portion to be lower, so that the color temperature in edge portion may be adjusted toward to high color temperature, and thus the phenomenon of yellow halo may be alleviated.

According to one embodiment, an illumination system includes a plurality of white light sources that satisfies −0.2≦[(P(λ)×V(λ))/(P(λmax1)×V(λmax1))−(B(λ)×V(λ))/(B(λmax2)×V(λmax2))]≦+0.2 where P(λ) is an emission spectrum of a white light source having a specific color temperature, B(λ) is an emission spectrum of black body radiation having a corresponding color temperature, V(λ) is a spectrum of spectral luminous efficiency, λmax1 is a wavelength at which P(λ)×V(λ) becomes maximum, and λmax2 is a wavelength at which B(λ)×V(λ) becomes maximum. The respective white light sources have different color temperatures, and light from the respective white light sources is irradiated from different directions to a target.

A light emitting device includes a light emitting element adapted to emit blue light, quantum dots that absorb part of the blue light emitted from the light emitting element to emit green light, and at least one of a KSF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light.

A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, a red light emitting portion configured to emit red light, in which the blue light emitting portion include a first near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the first near-UV light emitting diode chip, blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of intensity of the second peak wavelength.

A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.

A lighting device includes a light source emitting light having a first bandwidth. A single optic device is coupled to the light source. The single optic device filters light having a preselected subrange of wavelengths within the first bandwidth to generate a first filtered light. The single optic device controls a shape of a beam of the filtered light. The filtered light creates a high-intensity narrow-spectrum light output. A second light source emits a high-intensity narrow-spectrum light output.

A light-emitting device includes light-emitting elements each having a light-extracting surface, light-transmissive members and a covering member, The light-transmissive members each has an upper surface and a lower surface facing the light-extracting surface of at least one of the light-emitting elements. The covering member integrally covers lateral surfaces of the light-emitting elements and lateral surfaces of the light-transmissive members such that a pair of electrodes of the light-emitting elements are exposed from the covering member at a lower surface of the covering member. At a lower surface of the light-emitting device, the light-emitting elements are arranged in a plurality of columns and a plurality of rows, an alignment direction of the electrodes in one of the light-emitting elements is rotated by 90° in a prescribed. direction from an alignment direction of the electrodes in an adjacent one of the light-emitting elements in one of a column direction and a row direction.