In an embodiment a component includes at least two component parts configured to generate electromagnetic radiation, two encapsulations and a one-piece carrier frame having a plurality of openings, each opening in form of a through-hole, wherein the component parts are arranged in different openings such that a respective component part is laterally spaced apart from inner walls of an associated opening, wherein each component part is enclosed in lateral directions by one of the encapsulations such that the component parts are mechanically connected to the carrier frame via the encapsulations thereby forming a self-supporting and mechanically stable unit, wherein the carrier frame comprises a casting material, the casting material being a castable silicone, a resin or a plastic material, and wherein the two encapsulations arranged in the two openings of the carrier frame have different materials or different fluorescents.

A LED package comprises an LED chip, a reflective structure which encloses the LED chip, a wavelength conversion structure placed on the LED chip, and an absorbing structure which encloses or is placed on the reflective structure.

An LED filament and an LED light bulb applying the same are provided. The LED filament includes a at least one LED section, wherein the at least one LED section comprises at least two LED chips electrically connected to each other through a first wire, and at least two conductive electrodes, wherein each of the at least two conductive electrodes is electrically connected to corresponding one of the at least one LED section; and a light conversion layer, covering the at least one LED section and a portion of each of the at least two conductive electrodes, a portion of the first wire is exposed outside the light conversion layer.

The present invention relates to a micro-lens array having a color-conversion function and provided in a micro-LED display module, a micro-LED display module including the micro-lens array, and a method for manufacturing the micro-lens array, An micro-lens array according to an embodiment of the present invention is provided in a micro-LED display module in which micro-LEDs themselves are used as light-emitting materials. The micro-lens array may comprise: a body; bank parts formed to be recessed inward from one surface of the body so as to be in one-to-one correspondence with the micro-LEDs, respectively; lens parts formed to protrude from the opposite surface of the body so as to be in one-to-one correspondence with the bank parts, respectively; a partition wall part formed between the bank parts; and a color-conversion part provided in each of the bank parts so as to convert the color of light emitted from each of the micro-LEDs.

The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 μm≤R≤40 μm; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as r.sub.inner.

A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni.sup.2+, a perovskite type phosphor doped with Ni.sup.2+ and Cr.sup.3+, and a garnet type phosphor doped with Ni.sup.2+ and Cr.sup.3+.

In an image display device, a scattering unit has a size that covers a surface of a red conversion unit on a side that emits light having a second wavelength and a surface of a green conversion unit on a side that emits light having a third wavelength, and faces at most a part of a micro LED element.