Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.

A method for semiconductor device fabrication includes forming storage elements on conductive structures. An interlevel dielectric (ILD) layer is formed over the storage elements. Trenches are patterned in the ILD layer to expose a top portion of the storage elements. The storage elements where interlevel vias are to be formed is removed. A conductive material is deposited in the trenches and the via openings to concurrently make contact with the storage elements and form interlevel vias in the via openings.

Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.

Certain aspects of the present disclosure generally relate to integration of a hybrid conductor material in power rails of a semiconductor device. An example semiconductor device generally includes an active electrical device and a power rail. The power rail is electrically coupled to the active electrical device, disposed above the active electrical device, and embedded in at least one dielectric layer. The power rail includes a first conductive layer, a barrier layer, and a second conductive layer. In certain cases, copper may be used as conductive material for the second conductive layer. The barrier layer is disposed between the first conductive layer and the second conductive layer.

Integrated chips and methods of forming conductive lines thereon include forming parallel lines from alternating first and second dummy materials. Portions of the parallel lines are etched, using respective selective etches for the first and second dummy materials, to form gaps. The gaps are filled with a dielectric material. The first and second dummy materials are etched away to form trenches. The trenches are filled with conductive material.

A method includes depositing a first dielectric structure over a non-insulator structure, removing a portion of the first dielectric structure to form a via opening, filling the via opening with a dummy structure, depositing a second dielectric structure over the dummy structure, etching a portion of the second dielectric structure to form a trench over the dummy structure, removing the dummy structure from the via opening, and filling the trench opening and the via opening with a conductive structure, wherein the conductive structure is electrically connected to the non-insulator structure.

A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.

A method for fabricating a semiconductor device includes forming a through-hole penetrating through an alternating stack pattern and forming a gap-fill layer, wherein a sacrificial gap-fill layer of the gap-fill layer fills the through-hole. The method also includes forming a mask layer over the alternating stack pattern and over the gap-fill layer, wherein the mask layer includes a self-aligned opening overlapping the filled through-hole and overlapping a portion of an uppermost material layer of the alternating stack pattern adjacent to the filled through-hole. The method further includes forming a first contact hole through the alternating stack pattern by performing a single etch using both the mask layer and the portion of the uppermost material layer as etch barriers to remove, through the self-aligned opening, the sacrificial gap-fill layer filling the through-hole.

According to one embodiment, a wiring fabrication method includes pressing a first template including a first recessed portion and a second recessed portion provided at a bottom of the first recessed portion against a first film to form a first pattern including a first raised portion, corresponding to the first recessed portion, and a second raised portion, corresponding to the second recessed portion. The second raised portion protrudes from the first raised portion once formed. After forming the first pattern, a first wiring, corresponding to the first raised portion, and a via, corresponding to the second raised portion, is formed using the first pattern.

Integrated chips and methods of forming conductive lines thereon include forming parallel lines from alternating first and second dummy materials. Portions of the parallel lines are etched, using respective selective etches for the first and second dummy materials, to form gaps. The gaps are filled with a dielectric material. The first and second dummy materials are etched away to form trenches. The trenches are filled with conductive material.