A package structure and a formation method of a package structure are provided. The method includes forming multiple conductive vias in a carrier substrate and forming a redistribution structure over the carrier substrate. The redistribution structure has multiple polymer-containing layers and multiple conductive features. The method also includes disposing multiple chip structures over the redistribution structure. The method further includes bonding the carrier substrate to a package structure.

A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

A semiconductor device includes a die, an encapsulant over a front-side surface of the die, a redistribution structure on the encapsulant, a thermal module coupled to the back-side surface of the die, and a bolt extending through the redistribution structure and the thermal module. The die includes a chamfered corner. The bolt is adjacent to the chamfered corner.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a panel having an active side and a backside. The panel includes a plurality of semiconductor die encapsulated with an encapsulant. An active surface of the semiconductor die is exposed on the active side of the panel. A warpage control carrier is attached onto the backside of the panel. The warpage control carrier includes an electroactive element configured for substantially flattening the panel while a control voltage is applied to the electroactive element.

A semiconductor device and a manufacturing method of the semiconductor device by which peeling off of a sealing resin and a wire from each other can be practically suppressed are disclosed. The semiconductor device includes a substrate, a main face wire, a semiconductor element that is conductive to the main face wire, a sealing resin having resin side faces directed in a direction crossing a thickness direction, the sealing resin sealing the main face wire and the semiconductor element, a through-wire that is conductive to the main face wire and having an exposed rear face exposed from the substrate, and a column conductor that is conductive to the main face wire and having an exposed side face exposed from the resin side faces. The column conductor is supported from the opposite sides thereof in the thickness direction by the substrate and the sealing resin.

A semiconductor package includes a first package component comprising: a first semiconductor die; a first encapsulant around the first semiconductor die; and a first redistribution structure electrically connected to the semiconductor die. The semiconductor package further includes a second package component bonded to the first package component, wherein the second package component comprises a second semiconductor die; a heat spreader between the first semiconductor die and the second package component; and a second encapsulant between the first package component and the second package component, wherein the second encapsulant has a lower thermal conductivity than the heat spreader.

A method for manufacturing an electrical package is provided. The method include: providing a substrate having a first surface and a second surface opposite to the first surface, wherein the second surface has a first level difference; forming an adhesive layer on the second surface of the substrate, wherein the adhesive layer is configured to cover the second surface and provides a third surface spaced apart from the second surface of the substrate, wherein the third surface has a second level difference; disposing a tape on the third surface of the adhesive layer; and performing a removing operation on the first surface of the substrate; wherein the second level difference is smaller than the first level difference.

A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

A semiconductor package is disclosed. Specific implementations of a semiconductor package may include: one or more semiconductor die coupled between a baseframe and a clip, the baseframe including a gate pad of the baseframe coupled with a gate pad of the one or more semiconductor die, and a source pad of the baseframe coupled with a source pad of the one or more semiconductor die, where the gate pad of the baseframe extends beyond a perimeter of the one or more semiconductor die.