A wafer processing method includes a modified layer forming step of applying a laser beam so as to focus the laser beam inside the wafer, and form a modified layer along each division line, a wafer supporting step of attaching an expandable dicing tape to the back side of the wafer and mounting the peripheral portion of the dicing tape to an annular frame before or after performing the modified layer forming step, a tape expanding step of expanding the dicing tape attached to the back side of the wafer, and an air blowing step of blowing air against the wafer in the condition where the dicing tape is expanded, thereby dividing the wafer into individual device chips along each division line where the modified layer is formed and also increasing the spacing between any adjacent ones of the device chips.

An expanding apparatus includes a frame fixing part that fixes an annular frame of a workpiece unit, a holding table that holds a workpiece, an expanding unit that expands a sheet, a heating unit that heats the sheet between an outer circumferential side of the workpiece and an inner circumferential edge of the annular frame, and a cover that covers the workpiece held by the holding table. The cover covers the workpiece when the sheet is heated by the heating unit.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

A resin composition for temporary fixing, the resin composition containing (A) a thermoplastic resin, (B) a thermosetting resin, and (C) a silicone compound, the resin composition having a shear viscosity of 4000 Pa.Math.s or less at 120° C. and a rate of change in the shear viscosity being within 30% as determined before and after the resin composition is left to stand for 7 days in an atmosphere of 25° C.

Reliable plasma dicing of a wafer with a die attach film (DAF) to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. A combination of plama dicing and laser cutting is employed. Plasma is employed to etch the wafer while laser is employed to cut the DAF.

A method for dividing a wafer including: attaching a protective tape to a functional layer of the wafer with the adhesive layer of the tape in contact with the functional layer; and a wafer dividing step. The dividing step includes a cut groove forming step and a laser processing step. The cut groove forming step uses a blade to form a cut groove with a depth that does not reach the functional layer, resulting in part of the substrate being left along each division line. The laser processing step includes applying a laser beam to the part of the substrate left after the cut groove forming step and the functional layer of the wafer to form a laser processed groove having a depth reaching the tape. The tape is closely attached to the functional layer during the tape attaching step to prevent the adhesion of debris to the devices.

A die bonding apparatus includes: a driven body; and a table for driving the driven body. The table includes: a base; a linear motor having a first mover that moves the driven body, and a stator; a first linear motion guide that is provided between the base and the stator and capable of freely moving the stator; a second linear motion guide that is provided between the base and the first mover and capable of freely moving the first mover; a second mover provided in the form of being fixed to the base; and a control device for controlling the first mover and the second mover. The control device is configured to move the stator along the first linear motion guide using the second mover.

A thermosetting adhesive sheet comprises a thermosetting binder, a transparent filler having an average primary particle diameter from 1 nm to 1000 nm and a colorant; wherein content of the transparent filler is from 30 to 100 pts. mass with respect to 80 pts. mass of the thermosetting binder and content of the colorant is from 0.5 to 3.0 pts. mass with respect to 80 pts. mass of the thermosetting binder; this thermosetting adhesive sheet is applied to a grinding-side surface of a semiconductor wafer and before dicing the semiconductor wafer. Printing using laser marking is thus made clear enabling excellent laser mark visibility and accurate alignment using infrared light.

According to one embodiment, a manufacturing method of a semiconductor device includes the transferring a first group from a first support to a second support; the deforming the second support to convert each pitch of the semiconductor chips in the first group transferred on the second support into a second pitch different from the first pitch; the forming an insulating layer around each of the semiconductor chips, the insulating layer covering each of the semiconductor chips in the first group arranged in the second pitch; and the dicing the insulating layer. The first group is selected from a plurality of semiconductor chips supported by the first support. The plurality of semiconductor chips is arranged in an initial pitch. The first group is arranged in a first pitch being longer than the initial pitch.

A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting table and is processed such that a substrate of the LED wafer has a thickness smaller than or equal to 100 μm. A fixing piece is pasted on the LED wafer surface. The LED wafer is detached from the crafting table. The LED wafer together with the fixing piece are cut and broken, such that the LED wafer forms a plurality of LEDs. The fixing piece is removed. Before the LED wafer is detached from the crafting table, the fixing piece is pasted on the LED wafer to provide a supporting force to the LED wafer to maintain the flatness of the wafer and avoid the wafer being warped or the substrate being broken or damaged, such that product quality and reliability can be improved.