Disclosed herein is a method of transferring a wafer from a first tape that has been pressure-bonded to one surface of the wafer and also to a first frame having an opening with the wafer positioned therein, to a second tape that has been pressure-bonded to a second frame. The method includes a first-frame removing step of detaching the first tape from the first frame by pressing a portion of the first tape that lies between the first frame and the wafer, a second-frame pressure-bonding step of pressure-bonding the second tape pressure-bonded to the second frame to another surface of the wafer, a pressure-bonding force reducing step of reducing a pressure-bonding force of the first tape by imparting an external stimulus to the first tape, and a peeling step of peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

A wafer is positioned in an opening of a first frame. The wafer is pressure-bonded at one surface thereof to a first tape together with the first frame, onto a second tape pressure-bonded to a second frame. The wafer is processed by pressure-bonding the second tape, which is pressure-bonded to the second frame having an outer diameter smaller than an inner diameter of the opening of the first frame, to another surface of the wafer, cutting the first tape along an outer periphery of the second frame, imparting an external stimulus to the first tape to lower a pressure-bonding force with which the first tape is pressure-bonded to the one surface of the wafer, and peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

A method for releasing an adherend of the present invention includes a first step and a second step. In the first step, a bonded product (100) including a pressure-sensitive adhesive layer (10), and an adherend (20) bonded thereto is prepared. The pressure-sensitive adhesive layer (10) includes a pressure-sensitive adhesive component and a heat-expandable agent. In the second step, an energy ray (R) is irradiated from the pressure-sensitive adhesive layer (10)-side of the bonded product (100) toward the adherend (20). A transmittance of the energy ray (R) in the pressure-sensitive adhesive layer (10) is 60% or more. The pressure-sensitive adhesive composition of the present invention is a composition used for forming the pressure-sensitive adhesive layer (10) in the method.

A method for manufacturing a semiconductor device provided with a semiconductor chip includes: disposing the semiconductor chip such that an electrode of the semiconductor chip is abutted against a peeling portion provided on a substrate; forming an anchor portion, which defines a position of the semiconductor chip and has flexibility so as to be freely bendable, such that the anchor portion covers the peeling portion and the semiconductor chip; forming a sealing portion that is abutted against the anchor portion and has flexibility so as to be freely bendable; and separating the peeling portion and the substrate from the semiconductor chip and the anchor portion and exposing the electrode of the semiconductor chip. The anchor portion is formed by at least one of a vapor phase deposition method, a spray coating method, and an inkjet method.

The present invention provides a display panel and manufacturing method thereof, the method including following steps: providing a driving backplane and a light-emitting substrate, and bonding the driving backplane and the light-emitting substrate; patterning the light-emitting substrate to form a pixel array; forming a thin film packaging layer on an outside of the pixel array, the thin film packaging layer completely covering the pixel array; forming quantum dots on top of the thin film packaging layer to form a multi-color display; forming a reflective array between two adjacent quantum dots to avoid optical crosstalk between the pixel arrays. The display panel and the method of the present invention break through the physical limit of the high PPI, high-precision metal mask, which can realize the display of 2000 and higher PPI, and can prevent the optical crosstalk between the pixel arrays.

A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

A method for coating a multi-layered polymer film is disclosed including coating a first layer of polyimide onto a carrier, curing the first layer of polyimide by subjecting the first layer of polyimide to an elevated temperature, depositing a first layer of metal onto the cured first layer of polyimide, coating a second layer of polyimide onto the first layer of metal, and curing the second layer of polyimide by subjecting the second layer of polyimide to an elevated temperature. A flexible electronic device is also disclosed, including multiple interposed layers of polyimide and layers of metal, a dielectric barrier layer disposed on the top layer of polyimide, and a thin film transistor-based device disposed on the dielectric barrier layer. The flexible electronic device has little to no curl.

A transfer device for a micro light-emitting diode (micro LED) of the present application includes a collecting tube and a driving device. The collecting tube has a first end and a second end disposed oppositely, and the collecting tube includes a collecting opening and a storage tube, and the collecting opening is connected to the storage tube, and the collecting opening is disposed at the first end. The driving device is disposed at the second end, and the driving device is configured to provide a driving force, wherein the driving device is configured to provide the driving force to pick up the micro LED from the collecting opening into the storage tube so that the storage tube is able to store and stack at least two micro LEDs.