A semiconductor device includes: diffusion layers that are formed over a semiconductor substrate in a first direction, that are separated from one another by separation regions, and that serve as drain regions or source regions of respective transistors; a gate electrode of the transistors, which is formed in the first direction so as to straddle the diffusion layers; gate extraction wirings that are formed above the separation regions so as to sandwich therebetween the individual diffusion layers in the first direction, that are electrically coupled to the gate electrode above the separation regions, and that supply a gate signal to the gate electrode.

Disclosed herein are integrated circuit (IC) supports with microstrips, and related embodiments. For example, an IC support may include a first microstrip; a first surface dielectric region over the first microstrip, wherein the first surface dielectric region has a first thickness, and the first thickness is nonzero; a second microstrip; and a second surface dielectric region over the second microstrip, wherein the second surface dielectric region has a second thickness, the second thickness is nonzero, and the first thickness is different than the second thickness.

An illustrative example electronic device includes a substrate integrated wave guide (SIW) comprising a substrate and a plurality of conductive members in the substrate. An antenna member is situated at least partially in the substrate in a vicinity of at least some of the plurality of conductive members. A signal generator has a conductive output electrically coupled with the antenna member. The antenna member radiates a signal into the SIW based on operation of the signal generator.

A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.

A semiconductor package and die assembly with a package having an exterior surface and an interior space, the interior space defined by a first side wall, and a second side wall that opposes the first side wall. Also part of the assembly is a package floor and a package ceiling. The package floor includes package floor conductors. The package ceiling opposes the package floor and includes package ceiling conductors in the package ceiling. One or more semiconductor dies are on the floor of the package floor. Electrical conductors electrically connect the one or more floor dies to the package floor conductors. One or more semiconductor dies are located on the package ceiling. Electrical conductors are configured to electrically connect the one or more ceiling dies to the package ceiling conductors. An air space is located between the package floor and the package ceiling.

In a wired substrate, heat dissipation performance is improved while an increase in an amount of metal is inhibited.

The substrate includes a transmission line, an insulating material, and a heat storage material. In the substrate provided with the transmission line, the insulating material and the heat storage material, the transmission line transmits a predetermined electrical signal from a semiconductor chip. The transmission line for transmitting the predetermined electrical signal from the semiconductor chip is wired in the insulating material. The heat storage material has a higher thermal conductivity than the insulating material to which the transmission line is wired and accumulates latent heat accompanying phase transition that occurs within an operating temperature range of the semiconductor chip.

Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

A patch on interposer (PoINT) package is described with a wireless communications interface. Some examples include an interposer, a main patch attached to the interposer, a main integrated circuit die attached to the patch, a second patch attached to the interposer, and a millimeter wave radio die attached to the second patch and coupled to the main integrated circuit die through the interposer to communicate data between the main die and an external component.

A three-dimensional integrated circuit (3DIC) and techniques for fabricating a 3DIC. An example semiconductor device generally includes an integrated circuit (IC) having a first plurality of pads coupled to components of the IC, wherein a first oxide material is disposed between the first plurality of pads, and a second plurality of pads, wherein at least a portion of the first plurality of pads is bonded to at least a portion of the second plurality of pads, and wherein a second oxide material is disposed between the second plurality of pads and is bonded to the first oxide material b. The semiconductor device may also include a substrate disposed above the second plurality of pads, one or more passive devices adjacent to the substrate, and one or more vias formed through the substrate, wherein at least one of the second plurality of pads is coupled to the one or more vias.