One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.

A method of packaging an RF transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

A semiconductor device includes: a substrate; a circuit element disposed on a first surface side of the substrate; a first transmission line disposed on the first surface side; a first terminal disposed on the first surface side; a first dielectric disposed in a part of the first transmission line; a second terminal disposed on a side of the first dielectric opposite to the first transmission line; a second transmission line disposed on the first surface side and has one end coupled to the circuit element; a third terminal disposed on the first surface side and coupled to the other end of the second transmission line; a second dielectric disposed in a part of the second transmission line; a fourth terminal disposed on a side of the second dielectric opposite to the second transmission line; and a conductor disposed on a second surface side of the substrate.

Embodiments of a microelectronic assembly comprise a plurality of transceiver modules, each transceiver module including a first antenna; a printed circuit board (PCB); and a reflector module coupled to the PCB and separated from the plurality of transceiver modules by a space. The reflector module comprises: a substrate having a first side and an opposing second side, the first side being proximate to the plurality of transceiver modules, an antenna-array on the first side of the substrate, the antenna-array including a plurality of second antennas; a first integrated circuit (IC) die on the second side of the substrate; and a second IC die on the second side of the substrate. The first IC die comprises radio frequency (RF) switches configured to operate at electromagnetic frequencies between 20 kHz and 1 THz, and the second IC die comprises memory cell arrays and digital logic circuits.

An electronic device may include an IC, a grid array substrate, and a multi-level interposer coupled between the IC and the grid array substrate. The multi-level interposer may have dielectric layers, and a sequence of metal levels carried by respective dielectric layers, and an RF sloped via including a sloped metal signal layer extending from a first metal level, through a second metal level, and to a third metal level, and a respective sloped lateral metal ground layer adjacent each side of the sloped metal signal layer.

An apparatus includes an antenna array package cover comprising a radiating surface, a mating surface disposed opposite the radiating surface, and an array of antenna array sub-patterns wherein each antenna array sub-pattern comprises at least one antenna element. The antenna array package also includes an array of sub-pattern interface packages mated to the mating surface of the antenna array package cover. Each sub-pattern interface package of the array of sub-pattern interface packages comprises a package carrier, a sub-pattern integrated circuit electrically and mechanically coupled to the package carrier, and a set of interface lines corresponding to the antenna elements of the antenna array sub-pattern that corresponds to the sub-pattern interface package. Methods for mounting the above apparatus into a host circuit are also disclosed herein.

A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.

Wireless modules having a semiconductor package attached to an antenna package is disclosed. The semiconductor package may house one or more electronic components as a single die package and/or a system in a package (SiP) implementation. The antenna package may be communicatively coupled to the semiconductor package using by one or more coupling pads. The antenna package may further have one or more radiating elements for transmitting and or receiving wireless signals. The antenna package and the semiconductor package may have dissimilar number of interconnect layers and/or dissimilar materials of construct.

Signal isolation for module with ball grid array. In some embodiments, a packaged module can include a packaging substrate having an underside, and an arrangement of conductive features implemented on the underside of the packaging substrate to allow the packaged module to be capable of being mounted on a circuit board. The arrangement of conductive features can include a signal feature implemented at a first region and configured for passing of a signal, and one or more shielding features placed at a selected location relative to the signal feature to provide an enhanced isolation between the signal feature and a second region of the underside of the packaging substrate.

A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.