A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.

A high frequency circuit includes: a first wire provided on a front surface of a board and being in contact with a heat generation part; a second wire provided on the front surface of the board and connected to ground; and a chip resistor connected between the first wire and the second wire and having a thermal conductive characteristic and an electric insulation characteristic, and the first wire includes: a wire part which is disposed between the heat generation part and the chip resistor, and which has a characteristic impedance equal to an impedance as a reference for impedance matching in the first wire; and a wire part which is disposed on a low temperature side with the chip resistor being set as a boundary, and which has a thermal resistance higher than that of the chip resistor.

The present disclosure provides an antenna package structure and an antenna packaging method. The package structure includes an antenna circuit chip, a first packaging layer, a first rewiring layer, an antenna structure, a second metal connecting column, a third packaging layer, a second antenna metal layer, and a second metal bump. The antenna circuit chip, the antenna structure, and the second antenna metal layer are interconnected by using the rewiring layer and the metal connecting column.

An electronic device package is described. The electronic device package includes one or more dies. The electronic device package includes an interposer coupled to the one or more dies. The electronic device package also includes a package substrate coupled to the interposer. The electronic device package includes a plurality of through-silicon vias (TSVs) in at least one die of the one or more dies, or the interposer, or both. The electronic device package includes a passive equalizer structure communicatively coupled to a TSV pair in the plurality of TSVs. The passive equalizer structure is operable to minimize a level of insertion loss variation in the TSV pair.

Embodiments described herein may be related to apparatuses, processes, and techniques related to positioning signal and ground vias, or ground planes, in a glass core to control impedance within a package. Laser-assisted etching processes may be used to create vertical controlled impedance lines to enhance bandwidth and bandwidth density of high-speed signals on a package. Other embodiments may be described and/or claimed.

A wafer-level ASIC 3D integrated substrate, a packaging device and a preparation method are disclosed. The substrate includes a first wiring layer conductive pillars, a molding layer, a second wiring layer, a bridge IC structure and solder balls. The first wiring layer includes a first dielectric layer and a first metal wire layer. The second wiring layer includes a second dielectric layer and a second metal wire layer. The conductive pillars are disposed between the first wiring layer and the second wiring layer, two ends of each of the conductive pillars are electrically connected to the first metal wire layer and the second metal wire layer, respectively. The bridge IC structure is electrically connected to at least one conductive pillar. The molding layer molds the conductive pillars and the bridge IC structure. The solder balls are disposed on a side of the second wiring layer and electrically connected to the second metal wire layer.

Waveguide interconnects for semiconductor packages are disclosed. An example semiconductor package includes a first semiconductor die, a second semiconductor die, and a substrate positioned between the first and second dies. The substrate includes a waveguide interconnect to provide a communication channel to carry an electromagnetic signal. The waveguide interconnect is defined by a plurality of through substrate vias (TSVs). The TSVs in a pattern around the at least the portion of the substrate to define a boundary of the communication channel.

Embodiments described herein may be related to apparatuses, processes, and techniques related creating millimeter wave components within a glass core of a substrate within a semiconductor package. These millimeter wave components, which include resonators, isolators, directional couplers, and circulators, may be combined to form other structures such as filters or multiplexers. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to creating coaxial structures within glass package substrates. These techniques, in embodiments, may be extended to create other structures, for example capacitors within glass substrates. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to a transceiver architecture for inter-die communication on-package using mm-wave/THz interconnects. In particular, amplifier-less transceivers are used in combination with on-package low loss transmission lines to provide inter-die communication. In embodiments, signals on the interconnect may be transmitted between up conversion mixers and down conversion mixers without any additional amplification. Other embodiments may be described and/or claimed.