H01L2223/6616

Cavity packages

An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.

Antenna-in-package device with chip embedding technologies

A semiconductor device includes: a dielectric substrate; an integrated circuit (IC) die disposed inside an opening of the dielectric substrate, where the IC die is configured to transmit or receive radio frequency (RF) signals; a dielectric material in the opening of the dielectric substrate and around the IC die; a redistribution structure along a first side of the dielectric substrate, where a first conductive feature of the redistribution structure is electrically coupled to the IC die; a second conductive feature along a second side of the dielectric substrate opposing the first side; a via extending through the dielectric substrate, where the via electrically couples the first conductive feature and the second conductive feature; and an antenna at the second side of the dielectric substrate, where the second conductive feature is electrically or electromagnetically coupled to the antenna.

MULTIPLE ANTENNAS IN A MULTI-LAYER SUBSTRATE
20230120584 · 2023-04-20 ·

In one example, an apparatus comprises an integrated circuit, a first metal layer, and a second metal layer. The first metal layer includes a first antenna connected to the integrated circuit, the first antenna being in a first region, the first region being external to the integrated circuit. The second metal layer includes a second antenna in a second region external to the integrated circuit. The apparatus further comprises a substrate between the first and second metal layers, in which the substrate and the first and second metal layers form a laminate. The apparatus further comprises a through-via in the substrate that couples between the first and second antennas.

BALUN PHASE AND AMPLITUDE IMBALANCE CORRECTION
20230124600 · 2023-04-20 ·

In one example, an apparatus comprises: a first metal layer including a first segment and a second segment, in which the first segment is electrically coupled to a single-ended signal terminal, the second segment has a disconnected end; a second metal layer including a third segment and a fourth segment, in which the third segment is magnetically coupled to the first segment, the fourth segment is magnetically coupled to the second segment, a first end of the third segment and a first end of the fourth segment are electrically coupled at a center tap, and a second end of the third segment and a second end of the fourth segment are electrically coupled to respective first and second signal terminals of a pair of differential signal terminals; and a phase adjustment device proximate the center tap and electrically coupled to a second voltage reference terminal.

PACKAGED INTEGRATED CIRCUIT DEVICE WITH BUILT-IN BALUNS

A packaged integrated circuit (IC) includes an IC die having first and second external contacts and a package substrate. The IC die is attached to the package substrate which includes a balun in a first metal layer. The balun is connected to the first and second external contacts of the IC die and to a first external contact of the package substrate. The first and second external contacts of the IC die communicate a differential signal with the package substrate, and the first external contact of the package substrate communicates a single-ended signal corresponding to the differential signal. Alternatively, the balun is connected to an external contact of the IC die and to first and second external contacts of the package substrate, in which the external contact of the IC die communicates a single-ended signal and the first and second external contacts of the package substrate communicate a differential signal.

SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING THE SAME

A semiconductor structure includes an antenna pad, a ground plane and a plurality of conductive vias. The ground plane is disposed over the antenna pad and includes a plurality of first conductive patterns separated from one another. The conductive vias are disposed between the antenna pad and the ground plane. The plurality of conductive vias are arranged to surround an area of the antenna pad and electrically connected to the antenna pad, and the plurality of first conductive patterns are overlapped with the area of the antenna pad.

THREE-DIMENSIONAL FAN-OUT INTEGRATED PACKAGE STRUCTURE, PACKAGING METHOD THEREOF, AND WIRELESS HEADSET
20230163114 · 2023-05-25 ·

A three-dimensional fan-out integrated package structure, a packaging method thereof, and a wireless headset are disclosed. The three-dimensional fan-out integrated package structure includes a first rewiring layer, a second rewiring layer, a metal connection pillar, a first semiconductor chip, a second semiconductor chip, a first filler layer, a first encapsulating layer, a functional chip, a second filler layer, a second encapsulating layer, and metal bumps. By stacking two semiconductor chips, the structure can effectively reduce the packaging area and realize device packaging with high density and high integration, while enabling the minimum line width/line spacing to be reduced to 1.5 μm/1.5 μm. In addition, the three-dimensional fan-out integrated package structure can simultaneously integrate various functional chips and components such as GPU/PMU/DDR/mm-wave antenna/capacitor/inductor/transistor/flash memory/filter to realize system-level packaging, which not only can reduce cost but also improve the effectiveness of the package structure by using physical isolation to reduce device interference.

PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

A package structure and a manufacturing method thereof are provided. The package structure includes a carrier substrate, an integrated circuit (IC) die thermally coupled to the carrier substrate through a thermally conductive layer, an antenna pattern disposed over the carrier substrate and the IC die, a redistribution structure disposed between the antenna pattern and the IC die, and an underfill disposed below and thermally coupled to the carrier substrate. The antenna pattern is electrically coupled to the IC die.

VERTICAL INTERCONNECT DESIGN FOR IMPROVED ELECTRICAL PERFORMANCE

The present disclosure generally relates to a printed circuit board assembly that may include a circuit board having a first surface and an opposing second surface. The printed circuit board assembly may also include a first interconnect barrel disposed in the circuit board. The first interconnect barrel may have a first length extending between the first surface and the second surface. The first interconnect barrel may include a first section, and may further include a second section spaced apart from the first section by a first gap having a first depth extending partially through the first length. The printed circuit board assembly may further include a first conductive trace coupled to the first section and a second conductive trace coupled to the second section at a first terminal.

SEMICONDUCTOR PACKAGE INCLUDING ELECTROMAGNETIC SHIELD STRUCTURE

A semiconductor package includes; a package substrate, a semiconductor chip on the package substrate, an electromagnetic shield structure on the package substrate and including an upper cover covering an upper surface of the semiconductor chip and a side cover surrounding the semiconductor chip, and a sealing member contacting the semiconductor chip and the electromagnetic shield structure, wherein the side cover includes first through holes and the upper cover includes second through holes.