A radar system is described. In accordance with one example implementation, the radar system comprises a passive coupler arrangement and also a first radar chip, a second radar chip and a third radar chip. The radar chips each comprise at least one external RF contact and also a local oscillator designed to generate an RF oscillator signal at least in a switched-on state. The external RF contacts of the radar chips are coupled via the coupler arrangement in such a way that, in a first operating mode, the RF oscillator signal can be transferred from the first radar chip via the coupler arrangement to the second radar chip and the third radar chip, and that, in a second operating mode, the RF oscillator signal can be transferred from the second radar chip via the coupler arrangement to the third radar chip.

Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.

A coplanar waveguide structure includes a dielectric layer disposed over at least a portion of a substrate and a planar transmission line disposed within the dielectric layer. In some instances, the planar transmission line can include a conductive signal line and one or more ground lines. In other instances, the planar transmission line may include a conductive stacked signal line and one or more stacked ground lines.

The present disclosure describes epitaxial oxide field effect transistors (FETs). In some embodiments, a FET comprises: a substrate comprising an oxide material; an epitaxial semiconductor layer on the substrate; a gate layer on the epitaxial semiconductor layer; and electrical contacts. In some cases, the epitaxial semiconductor layer can comprise a superlattice comprising a first and a second set of layers comprising oxide materials with a first and second bandgap. The gate layer can comprise an oxide material with a third bandgap, wherein the third bandgap is wider than the first bandgap. In some cases, the epitaxial semiconductor layer can comprise a second oxide material with a first bandgap, wherein the second oxide material comprises single crystal A.sub.xB.sub.1-xO.sub.n, wherein 0<x<1.0, wherein A is Al and/or Ga, wherein B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.

A first signal lead pin is bent such that one end is connected to a first signal line of a differential coplanar line, and the other end is apart from a mounting surface. A second signal lead pin is bent such that one end is connected to a second signal line of the differential coplanar line, and the other end is apart from the mounting surface. A ground lead pin is bent such that one end is connected to a ground line of the differential coplanar line, and the other end is apart from the mounting surface.

A transmission circuit includes a first semiconductor device, a second semiconductor device, a first signal line, a second signal line, a third signal line, and a ground line. A differential signal is composed of a first signal and a second signal. The first signal line is configured to connect the first semiconductor device and the second semiconductor device and used to transmit the first signal. The second signal line is configured to connect the first semiconductor device and the second semiconductor device and used to transmit the second signal. The second signal line, the first signal line, the ground line, and the third signal line are disposed in this order. A distance between the first signal line and the ground line is larger than a distance between the first signal line and the second signal line.

A method of manufacturing the semiconductor structure includes: providing a substrate; forming a first conductive via and a second conductive via extending in the substrate; depositing a first dielectric layer over the substrate and the first and second conductive vias; receiving a waveguide; moving the waveguide to a location over the first dielectric layer and aligning the waveguide with a position of the first dielectric layer; attaching the waveguide to the position of the first dielectric layer; forming a first conductive member and a second conductive member over the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; and etching a backside of the substrate to electrically expose the first and second conductive vias. The first conductive member or the second conductive member is electrically connected to the first or second conductive via.

Embodiments may relate to a microelectronic package that includes a radio frequency (RF) chip coupled with a die by interconnects with a first pitch. The RF chip may further be coupled with a waveguide of a package substrate by interconnects with a second pitch that is different than the first pitch. The RF chip may facilitate conveyance of data to the waveguide as an electromagnetic signal with a frequency greater than approximately 20 gigahertz (GHz). Other embodiments may be described or claimed.

Embodiments of the invention include dielectric waveguides and connectors for dielectric waveguides. In an embodiment a dielectric waveguide connector may include an outer ring and one or more posts extending from the outer ring towards the center of the outer ring. In some embodiments, a first dielectric waveguide secured within the dielectric ring by the one or more posts. In another embodiment, an enclosure surrounding electronic components may include an enclosure wall having an interior surface and an exterior surface and a dielectric waveguide embedded within the enclosure wall. In an embodiment, a first end of the dielectric waveguide is substantially coplanar with the interior surface of the enclosure wall and a second end of the dielectric waveguide is substantially coplanar with the exterior surface of the enclosure wall.

A test apparatus and method for testing a semiconductor device. The semiconductor device includes an integrated circuit and a plurality of external radiating elements located at a surface of the device. The external radiating elements include at least one transmit element and receive element. The test apparatus includes a plunger. The plunger includes a dielectric portion having a surface for placing against the surface of the device. The plunger also includes at least one waveguide. Each waveguide extends through the plunger for routing electromagnetic radiation transmitted by one of the transmit elements of the device to one of the receive elements of the device. Each waveguide comprises a plurality of waveguide openings for coupling electromagnetically to corresponding radiating elements of the device. The dielectric portion is configured to provide a matched interface for the electromagnetic coupling of the waveguide openings to the plurality of external radiating elements of the device.