Front end systems and related devices, integrated circuits, modules, and methods are disclosed. One such front end system includes a low noise amplifier in a receive path and a power amplifier in a transmit path. The low noise amplifier includes a first inductor, an amplification circuit, and a second inductor magnetically coupled to the first inductor to provide negative feedback to linearize the low noise amplifier. The power amplifier includes an injection-locked oscillator driver stage. Other embodiments of front end systems are disclosed, along with related devices, integrated circuits, modules, methods, and components thereof.

Embodiments of an amplifiers and integrated circuits include a first transistor and a second transistor. A second current-carrying terminal of the first transistor may be coupled to a first current-carrying terminal of the second transistor and the control terminal of the second transistor may be coupled to a low impedance alternating current (AC) potential node. A bias network that includes a first circuit element and a second circuit element couples the second current-carrying terminal of the second transistor to the control terminal of the second transistor. The first circuit element may be configured to apply a portion of a potential at the second current-carrying terminal of the second transistor to the control terminal of the second transistor, and the second circuit element may be coupled between the control terminal of the second transistor and a fixed potential.

An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

An amplifier module includes a module substrate with a mounting surface, and a thermal dissipation structure that extends through the module substrate. A ground contact of a power transistor die is coupled to a surface of the thermal dissipation structure. Encapsulant material covers the mounting surface of the module substrate and the power transistor die, and a surface of the encapsulant material defines a contact surface of the amplifier module. A ground terminal is embedded within the encapsulant material. The ground terminal has a proximal end coupled to the thermal dissipation structure, and a distal end exposed at the contact surface. The ground terminal is electrically coupled to the ground contact of the power transistor die through the thermal dissipation structure.

A system and method for operating and fabricating microelectronics for use in extreme-temperature operating environments is disclosed. The microelectronics are designed for operating at conditions that may include temperatures greater than three hundred degrees Celsius. The system and method include one or more modules that each comprise a substrate, a package lid, and an integrated circuit die. A package lid that encloses the integrated circuit die and is disposed on the opposite side of the integrated circuit die from that of a substrate. A thermo-mechanical attachment layer is provided between the integrated circuit die and package lid. Additionally, one or more microfabricated metal pillars that incorporate both thermo-mechanical pathways and signal pathways are provided to connect the integrated circuit die to the substrate.

Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

A power amplifier module includes a module substrate. First and second heat dissipation structures extend through the module substrate, and each has a first surface exposed at a mounting surface of the module substrate, and a second surface exposed at a bottom surface of the module substrate. The first surfaces of the first and second heat dissipation structures are physically separated by a portion of the mounting surface. First and second amplifier dies are coupled to the first surface of the first heat dissipation structure. The first amplifier die includes a first power transistor that functions as a driver amplifier. The second amplifier die includes a second power transistor that functions as a first final amplifier. The third amplifier die is coupled to the first surface of the second heat dissipation structure, and the third amplifier die includes a third power transistor that functions as a second final amplifier.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

A high-frequency module according to the present disclosure includes: an MMIC; a multilayer substrate on which the MMIC is mounted; a signal wire that is arranged above the multilayer substrate, is connected to the MMIC and is a transmission path that transmits a high-frequency signal outputted from the MMIC; and a ground wire having at least one end that is connected to a ground electrode on an upper surface of the multilayer substrate and that is arranged so as to straddle the signal wire.