A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm.sup.2.

An amplifier has a plurality of gate finger electrodes, two gate connection electrodes, a plurality of source electrodes and a plurality of drain electrodes, and a plurality of drain connection elements. The plurality of gate finger electrodes are arranged pectinate on the surface of the active region of the semiconductor substrate. The two gate connection electrodes connect in common each of both ends of the plurality of gate finger electrodes. The plurality of source electrodes and the plurality of drain electrodes are arranged alternately on the surface of the semiconductor substrate between the plurality of gate finger electrodes. The plurality of drain connection elements connects in sequence the plurality of drain electrodes. The ratio of the inductance value of each drain connection element to the parasitic capacitance of the drain-source electrodes between the corresponding drain electrode and the source electrode is constant.

Example embodiments relate to hybrid Doherty power amplifier modules. One embodiment includes a printed circuit board having an input RF terminal and an output RF terminal, and on which printed circuit board a primary Doherty amplifier is integrated. The primary Doherty amplifier includes a primary Doherty splitter arranged on the printed circuit board and configured for splitting an input RF signal received at the input RF terminal into a plurality of RF signal components. The primary Doherty amplifier also includes a plurality of amplifying paths, each amplifying path being partially integrated on a semiconductor die of a first kind mounted on the printed circuit board and partially integrated on a semiconductor die of a second kind mounted on the printed circuit board. Further, the primary Doherty amplifier includes a primary Doherty combiner arranged on the printed circuit board.

The present disclosure relates to a hermetic package with improved RF stability and performance. The package includes a carrier, a bottom dielectric ring over the carrier, a bottom metal layer over the bottom dielectric ring, a top dielectric ring over the bottom metal layer, a top metal layer over the top dielectric ring, an exterior plated layer, and multiple top vias. Herein, the bottom metal layer includes signal sections and at least one ground section, which is electrically isolated from the signal sections. The exterior plated layer covers at least a portion of a first exterior sidewall of the bottom ring structure and electrically couples the carrier to the at least one ground section. The multiple top vias extend through the top dielectric ring and electrically couple the top metal layer to the at least one ground section.

According to one embodiment, a high-frequency amplifier includes an active element and an output matching circuit. The active element is provided on a substrate. The active element is configured to amplify a signal having a frequency band. The active element includes a cell region. The output matching circuit is connected to the active element. The output matching circuit includes a wire, a transmission line and an output terminal. The wire includes an input end and an output end. The input end of the wire is connected to an output part of the cell region of the active element. The transmission line is provided on the substrate. The transmission line includes an input part and an output part. The input part of the transmission line is connected to the output end of the wire. The output terminal is provided on the substrate.

A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.

Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

Examples of an amplifier includes an input divider section having a first path and a second path for branching of an input signal, wherein a passing phase at the first path and a passing phase at the second path are different; a first amplifying element that amplifies a signal input to the first path; a second amplifying element that amplifies a signal input to the second path; an output synthesizing section that performs synthesis of an output of the first amplifying element and an output of the second amplifying element with a third path for transmitting the output of the first amplifying element and a fourth path for transmitting the output of the second amplifying element, wherein a passing phase at the third path and a passing phase at the fourth path are different; and an electromagnetic coupling section that establishes electromagnetic coupling of two signals.

A high-frequency front-end circuit includes a plurality of power amplifiers. Power supply inductors and matching inductors for the power amplifiers are formed of conductors disposed on a substrate. The power supply inductors and the matching inductors are disposed on or in different layers. When the substrate is seen in a plan view, at least a portion of the first power supply inductor and at least a portion of the second matching inductor overlap each other with an insulating layer interposed therebetween.