A method for tuning a resonant frequency of wireless communication circuitry on a multichip module including a plurality of chips includes applying an electrical insulator to an upper surface of the multichip module; creating a plurality of openings in the electrical insulator, each opening being positioned at a successive one of the bond pads to be electrically connected to create a plurality of exposed bond pads; applying metal to each exposed bond pad to form a successive one of a plurality of interconnect bases; removing a portion of the layer of photoresist to create a plurality of bridge supports, each bridge support positioned between a successive pair of interconnect bases; applying metal to each bridge support and associated interconnect bases to form a successive one of the interconnect traces; removing the bridge supports; and disconnecting one or more of the interconnect traces as necessary to obtain a target resonant frequency.

A radio-frequency module includes: a transmitting circuit disposed on a mounting substrate to process a radio-frequency signal input from a transmission terminal and to output a resultant signal to a common terminal; a receiving circuit disposed on the mounting substrate to process a radio-frequency signal input from the common terminal and to output a resultant signal to a reception terminal; a first inductor included in a first transmitting circuit; and a bonding wire connected to the ground and bridging over the first inductor.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

In one example, an apparatus comprises an integrated circuit, a first metal layer, and a second metal layer. The first metal layer includes a first antenna connected to the integrated circuit, the first antenna being in a first region, the first region being external to the integrated circuit. The second metal layer includes a second antenna in a second region external to the integrated circuit. The apparatus further comprises a substrate between the first and second metal layers, in which the substrate and the first and second metal layers form a laminate. The apparatus further comprises a through-via in the substrate that couples between the first and second antennas.

A high-frequency amplifier includes a driver amplifier configured to amplify an input high-frequency signal, a Doherty amplifier, including a carrier amplifier and a peak amplifier, and configured to further amplify a signal output from the driver amplifier, a first multilayer substrate, a second multilayer substrate laminated to overlap the first multilayer substrate, and a base member mounted with the first multilayer substrate and the second multilayer substrate, wherein the driver amplifier is mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier are mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier have a front surface forming a predetermined circuit, and a back surface located on an opposite side from the front surface, respectively, the front surface of the driver amplifier opposes the first multilayer substrate, and the back surface of the driver amplifier is separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier both make contact with the base member, respectively, and the back surface of the driver amplifier is connected to an interconnect layer disposed on a surface of the second multilayer substrate, the interconnect layer is connected to one end of a first via penetrating the second multilayer substrate and the first multilayer substrate, and the other end of the first via is connected to the base member.

A packaged integrated circuit (IC) includes an IC die having first and second external contacts and a package substrate. The IC die is attached to the package substrate which includes a balun in a first metal layer. The balun is connected to the first and second external contacts of the IC die and to a first external contact of the package substrate. The first and second external contacts of the IC die communicate a differential signal with the package substrate, and the first external contact of the package substrate communicates a single-ended signal corresponding to the differential signal. Alternatively, the balun is connected to an external contact of the IC die and to first and second external contacts of the package substrate, in which the external contact of the IC die communicates a single-ended signal and the first and second external contacts of the package substrate communicate a differential signal.

A high-frequency module includes a mounting substrate having main surfaces 30a and 30b, a first circuit component mounted on the main surface 30a, a second circuit component mounted on the main surface 30b, an external connection terminal arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate, a long via conductor connected to the first circuit component, passing through the mounting substrate, and having a substantially long shape when the mounting substrate is viewed in a plan view, and a metal block arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate and connecting the long via conductor and the external connection terminal. When the mounting substrate is viewed in a plan view, the first circuit component overlaps the long via conductor and the metal block overlaps the long via conductor.

A high frequency amplifier includes a first transistor and a second transistor, a first drain pad connected to the first transistor and a second drain pad connected to the second transistor, a matching circuit pattern having a first transmission line connected to the first drain pad and a second transmission line connected to the second drain pad, a first wire and a second wire, and a wiring pattern connected to the first drain pad via the first transmission line and the first wire and connected to the second drain pad via the second transmission line and the second wire. An effective impedance of the second wire is larger than an effective impedance of the first wire. The matching circuit pattern has an asymmetrical external shape. An electrical length of the second transmission line is shorter than an electrical length of the first transmission line.

A semiconductor device according to one embodiment includes: a semiconductor chip having a transistor and a drain pad provided on a board; a capacitor having an upper electrode and a lower electrode interposing a dielectric; a pad; and an empty pad provided on the board of the semiconductor chip. The semiconductor device further includes: a first wire connecting the pad and the drain pad of the semiconductor chip to each other; a second wire connecting the empty pad and the upper electrode of the capacitor to each other; and a third wire connecting the pad and the empty pad to each other.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, a first mold layer, and a second mold layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first mold layer seals the first semiconductor device. The second mold layer seals the second semiconductor device. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The first mold layer and the second mold layer are made of different materials.