An integrated circuit device includes a device substrate having first and second opposing surfaces, a first component electrode coupled to the first surface, and a conductive plane coupled to the second surface. The integrated circuit device also includes a plurality of through substrate vias electrically coupling a first region of the first component electrode to the conductive plane through the device substrate, wherein a second adjacent region of the first component electrode is substantially devoid of through substrate vias. Arrangement of the plurality of through substrate vias in the first region is based on a projected current distribution through the first component electrode when the integrated circuit device is operational.

The embodiments described herein use resonant circuits to provide isolation between closely proximate conductors. For example, these resonant circuits can be used to reduce unwanted electromagnetic coupling and minimize crosstalk energy between package leads, bonding wires, and circuit board traces on radio frequency (RF) electronic devices, including RF power amplifiers. To facilitate a reduction in electromagnetic coupling, the resonant circuit is configured resonate with the closely proximate conductors at a selected frequency f.sub.0, and when resonating at the selected frequency f.sub.0 the resonant circuit provides a path to ground for the crosstalk energy. This path to ground reduces the crosstalk energy that would otherwise be shared between the two closely proximate conductors, and thus provides the electromagnetic isolation between the conductors.

Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier. The molding compound handler substrate provides backside isolation that prevents unwanted noise coupling.

A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a 3D metal insulator metal (MIM) capacitor structure with an increased capacitance per unit area in a semiconductor structure. The MIM structure includes a substrate, an oxide layer formed over the substrate, and a first metal layer formed over the oxide layer. The first metal layer includes a plurality of mandrels formed on a surface of the first metal layer. The MIM structure also includes a dielectric layer formed over the first metal layer and the plurality of mandrels, a second metal layer formed over on the dielectric layer, and one or more interconnect structures electrically connected to the first and second metal layers.

A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.

A power amplifier includes a main amplifier, an auxiliary amplifier, and a control circuit. The main amplifier is configured to amplify input power, and the auxiliary amplifier is configured to amplify the input power when the input power exceeds a certain level. The control circuit, which is provided between a source of the main amplifier and a ground, is configured to control a source potential of the main amplifier so as to increase the source potential when the input power reaches at least a certain value.

There is provided a component carrier comprising: (a) a stack of at least one electrically conductive layer structure and at least one electrically insulating layer structure; and (b) a bypass capacitance structure formed on an/or within the stack. The bypass capacitance structure comprises an electrically conductive film structure having a rough surface, a dielectric film structure formed on the rough surface, and a further electrically conductive film structure formed on the dielectric film structure.

Novel tools and techniques are provided for implementing cantilevered power planes to provide a return current path for high-speed signals. In various embodiments, a semiconductor package includes a substrate core, a plurality of layers, and an AC coupler(s). The plurality of layers includes power, ground, and signal layers each layer disposed on or above the substrate core, each signal layer being disposed between a power layer and a ground layer, the power layer and the ground layer each providing a return path for high frequency (e.g., 1 kHz or greater) signals carried by each signal layer. Each dielectric layer is disposed between and in contact with a pair of power, ground, or signal layer. The AC coupler(s) is coupled to each of a power layer(s) and a ground layer(s), without any portion of any power layer that is near an edge of the substrate core being anchored to the substrate core.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.