H01L2223/6666

Radio frequency interconnect

A radio frequency interconnect includes a plurality of transmitters. Each transmitter is associated with an individual carrier of a plurality of carriers. The radio frequency interconnect also includes a transmission channel communicatively coupled with the transmitters and a plurality of receivers communicatively coupled with the transmission channel. Each receiver is associated with a respective carrier. A combiner on a transmitter-side of the transmission channel is coupled with the transmitters between the transmitters and the transmission channel. A decoupler on a receiver-side of the transmission channel is coupled with the receivers between the receivers and the transmission channel. The radio frequency interconnect also includes at least one channel loss compensation circuit communicatively coupled between the plurality of transmitters and the plurality of receivers.

Semiconductor socket with direct selective metalization
09536815 · 2017-01-03 · ·

A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.

NOVEL POWER ARCHITECTURE WITH DUAL CORE ADVANCE SUBSTRATE

An electronic device may include a printed circuit board. The electronic device may include a first core with a first cavity, the first core formed from an organic material, and the first cavity configured to house a DC capacitor for delivery of direct current to a die from a voltage source. The device may include a second core with a second cavity, the second core formed from an inorganic material and the second cavity configured to house an AC capacitor coupled to an output of the die for decoupling alternating current effects associated with the direct current. The device may include an interposer layer disposed between the first core and the second core, configured to isolate the first core and the second core.

Electronic package with rotated semiconductor die

An electronic package includes a base of a rectangular shape, and a chip package including a first interface circuit die and a second interface circuit die. The first interface circuit die and second interface circuit die are mounted on a redistribution layer structure and encapsulated within a molding compound. The chip package is mounted on a top surface of the base and rotated relative to the base above a vertical axis that is orthogonal to the top surface through a rotation offset angle. A metal ring is mounted on the top surface of the base.

Interconnect structure for high power GaN module including a printed planar interconnect line and method for making the same

In described examples of a circuit module, a multilayer substrate has a conductive pad formed on a surface of the multilayer substrate. An integrated circuit (IC) die is bonded to the surface of the substrate in dead bug manner, such that a set of bond pads formed on a surface of the IC die are exposed. A planar interconnect line formed by printed ink couples the set of bond pads to the conductive pad.