A module includes a substrate including a first surface, at least one first component mounted on the first surface, a shield member mounted on the first surface to cover the first component, and a first sealing resin arranged at least between the shield member and the first surface. The shield member includes a top surface portion in a form of a plate and a plurality of leg portions that extend from the top surface portion toward the first surface.

A three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) includes a plurality of center studs disposed within cavity walls of a plurality of cavities in a top plate. The center studs and the cavity walls are oriented orthogonal to a first metal layer and extend through a first via layer and a second metal layer. Each center stud includes a metal layer stud in the second metal layer stacked on a via layer stud in the first via layer. A dielectric layer is disposed between the center studs and the cavity walls of the plurality of cavities in the top plate. The center studs are coupled to a first electrode, and the top plate is coupled to a second electrode in the interconnect layers. In some examples, the center studs can form vertically oriented cylindrical capacitive elements positioned for high capacitance density.

An output matching circuit includes a transformer having one end electrically connected to an output terminal of a power amplifier element that amplifies an input signal and another end electrically connected to a terminal connected to a load, and converting an impedance of the terminal connected to the load to an impedance higher than an impedance of the output terminal, a first filter circuit that attenuates a signal within a first frequency band higher than a transmission frequency band of the input signal, and a second filter circuit that attenuates a signal within a second frequency band higher than the first frequency band.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

Various integrated circuits formed using gallium nitride and other materials are described. In one example, an integrated circuit includes a first integrated device formed over a first semiconductor structure in a first region of the integrated circuit, a second integrated device formed over a second semiconductor structure in a second region of the integrated circuit, and a passive component formed over a third region of the integrated circuit, between the first region and the second region. The third region comprises an insulating material, which can be glass in some cases. Further, the passive component can be formed over the glass in the third region. The integrated circuit is designed to avoid electromagnetic coupling between the passive component, during operation of the integrated circuit, and interfacial parasitic conductive layers existing in the first and second semiconductor structures, to improve performance.

A three-dimensional fan-out integrated package structure, a packaging method thereof, and a wireless headset are disclosed. The three-dimensional fan-out integrated package structure includes a first rewiring layer, a second rewiring layer, a metal connection pillar, a first semiconductor chip, a second semiconductor chip, a first filler layer, a first encapsulating layer, a functional chip, a second filler layer, a second encapsulating layer, and metal bumps. By stacking two semiconductor chips, the structure can effectively reduce the packaging area and realize device packaging with high density and high integration, while enabling the minimum line width/line spacing to be reduced to 1.5 μm/1.5 μm. In addition, the three-dimensional fan-out integrated package structure can simultaneously integrate various functional chips and components such as GPU/PMU/DDR/mm-wave antenna/capacitor/inductor/transistor/flash memory/filter to realize system-level packaging, which not only can reduce cost but also improve the effectiveness of the package structure by using physical isolation to reduce device interference.

A multilayer wiring substrate and a module having the multilayer wiring substrate, wherein the multilayer wiring substrate has a capacitor with a capacitance value smaller than that of the conventional one. The substrate includes a core substrate and capacitors installed therein. At least one of the capacitors is a first capacitor which includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is located closer to the core substrate than the dielectric layer and the upper electrode are. The upper electrode is located farther away from the core substrate than the dielectric layer and the lower electrode are. The lower electrode is entirely disposed on the core substrate. The upper electrode has a first portion and a second portion. The first portion overlaps the dielectric layer and the lower electrode to serve as the first capacitor. The second portion extends from the first portion.

Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.

In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.

The embodiments herein are directed to technologies for crosstalk cancellation structures. One semiconductor package includes conductive metal layers separated by insulating layers, the conductive metal layers for routing signals between external package terminals and pads on an integrated circuit device. Signal lines formed in the conductive metal layers have electrode structure (capacitor electrode-like structures) formed for at least adjacent signaling lines of the package terminals. Two of the electrode structures from the adjacent signaling lines are formed opposite each other on different metal layers.