A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and an anisotropic conductive resin component. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess with the anisotropic conductive resin component interposed therebetween. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face.

A chip part includes a substrate, a first electrode and a second electrode which are formed apart from each other on the substrate and a circuit network which is formed between the first electrode and the second electrode. The circuit network includes a first passive element including a first conductive member embedded in a first trench formed in the substrate and a second passive element including a second conductive member formed on the substrate outside the first trench.

A package substrate is disclosed. The package substrate includes a die package in the package substrate located at least partially underneath a location of a power delivery interface in a die that is coupled to the surface of the package substrate. Connection terminals are accessible on a surface of the die package to provide connection to the die that is coupled to the surface of the package substrate. Metal-insulator-metal layers inside the die package are coupled to the connection terminals.

An antenna module includes an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having a semiconductor chip embedded therein; and an electronic component disposed at a side of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The antenna module includes a connection substrate connected to a portion of the antenna substrate, the connection substrate having an extension portion extending outward from the side of the antenna substrate, and the electronic component is disposed on the extension portion of the connection substrate to electrically connect to an inner wiring layer of the antenna substrate.

An integrated circuit (IC) device may include a first substrate having an inductor ground plane in a conductive layer of the first substrate. The integrated circuit may also include a first inductor in a passive device layer of a second substrate that is supported by the first substrate. A shape of the inductor ground plane may substantially correspond to a silhouette of the first inductor.

A biological information detecting apparatus includes: an LC resonant pressure sensor including a resonant circuit including a capacitor and an inductor, and having a resonant frequency that changes depending on a change in external pressure applied to the capacitor; and an integrated circuit (IC) chip package including a coil type antenna radiating a radio frequency (RF) signal within a preset frequency band, wherein a change in the resonant frequency results in a change in a power transmission rate depending on a inductive coupling between the resonant frequency and a frequency of the RF signal. The IC chip package includes the coil type antenna disposed in a region overlapping the LC resonant pressure sensor in a plan view of the IC chip package.

Various methods and devices that involve EMI shields for radio frequency layer transferred devices are disclosed. One method comprises forming a radio frequency field effect transistor in an active layer of a semiconductor on insulator wafer. The semiconductor on insulator wafer has a buried insulator side and an active layer side. The method further comprises bonding a second wafer to the active layer side of the semiconductor on insulator wafer. The method further comprises forming a shield layer for the semiconductor device. The shield layer comprises an electrically conductive material. The method further comprises coupling the radio frequency field effect transistor to a circuit comprising a radio frequency component. The method further comprises singulating the radio frequency field effect transistor, radio frequency component, and the shield layer into a die. The shield layer is located between a substrate of the radio frequency component and the radio frequency field effect transistor.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

A microelectronics package comprising a substrate, the substrate comprising a dielectric and at least first and second conductor level within the dielectric, where the first and second conductor levels are separated by at least one dielectric layer. The microelectronics package comprises an inductor structure that comprises a magnetic core. The magnetic core is at least partially embedded within the dielectric. The inductor structure comprises a first trace in the first conductor level, a second trace in the second conductor level, and a via interconnect connecting the first and second traces. The first trace and the second trace extend at least partially within the magnetic core.