A semiconductor device including a radio-frequency amplifier circuit and a band selection switch is mounted on or in a module substrate. An output matching circuit coupled between the radio-frequency amplifier circuit and the band selection switch is on or in the module substrate. The semiconductor device includes a first member at which the band selection switch having a semiconductor element made of an elemental semiconductor is formed and a second member joined to the first member in surface contact therewith. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. Conductive protrusions are raised from first and second members. The semiconductor device is mounted on or in the module substrate with the conductive protrusions interposed therebetween, and in plan view, is in close proximity to the output matching circuit or overlaps a passive element constituting the output matching circuit.

Making a semiconductor-on-insulator substrate provided with an eddy current blocking structure (20) formed in a segment (22) doped according to doping of a first type, of doped regions (23) periodically distributed on one or more parallel rows and according to a pattern (M.sub.2) and an improved arrangement.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.

Power amplifier (PA) packages, such as Doherty PA packages, containing multi-path integrated passive devices (IPDs) are disclosed. In embodiments, the PA package includes a package body through which first and second signal amplification paths extend, a first amplifier die within the package body and positioned in the first signal amplification path, and a second amplifier die within the package body and positioned in the second signal amplification path. A multi-path IPD is further contained in the package body. The multi-path IPD includes a first IPD region through which the first signal amplification path extends, a second IPD region through which the second signal amplification path extends, and an isolation region formed in the IPD substrate a location intermediate the first IPD region and the second IPD region.

The present invention includes a method for creating a system in a package with integrated lumped element devices is system-in-package (SiP) or in photo-definable glass, comprising: masking a design layout comprising one or more electrical components on or in a photosensitive glass substrate; activating the photosensitive glass substrate, heating and cooling to make the crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate on the surface of the photodefinable glass, wherein the integrated lumped element devices reduces the parasitic noise and losses by at least 25% from a package lumped element device mount to a system-in-package (SiP) in or on photo-definable glass when compared to an equivalent surface mounted device.

Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.

A method of making a semiconductor device, includes: forming a first molding layer on a substrate; forming a first plurality of vias in the first molding layer; forming a first conductive line over the first molding layer, wherein the first conductive line is laterally disposed over the first molding layer and a first end of the conductive line aligns with and is electrically coupled to a first via of the first plurality of vias; forming a second molding layer above the first molding layer; and forming a second plurality of vias in the second molding layer, wherein a second via of the second plurality of vias aligns with and is electrically coupled to a second end of the conductive line, and wherein the second plurality of vias, the conductive line, and the first plurality of vias are electrically coupled to one another.

A semiconductor device configured for a radio frequency (RF) application and further configured for passive device integration and/or improved cooling includes a substrate; an active region portion arranged on the substrate, the active region portion includes at least one radio frequency (RF) transistor amplifier; a cavity arranged within the substrate; and one or more radio frequency (RF) devices arranged in the cavity.