A semiconductor device having a radiating element and a directing structure is provided. The semiconductor device includes a device package. A semiconductor die is coupled to the radiating element integrated in the device package. The directing structure is affixed to the device package by way of an adhesive. The directing structure is located over the radiating element and configured for propagation of radio frequency (RF) signals.

The disclosure provides an electronic device which includes a substrate structure, a driving component, and a conductive pattern. The driving component and the conductive pattern are formed on the substrate structure, and the thickness of the conductive pattern is greater than or equal to 0.5 μm and less than or equal to 15 μm.

A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

A substrate having an electronic component embedded therein includes a core structure including a first insulating body and core wiring layers and having a cavity penetrating through a portion of the first insulating body, an electronic component disposed in the cavity, an insulating material covering at least a portion of each of the core structure and the electronic component and disposed in at least a portion of the cavity, a wiring layer disposed on the insulating material, and a build-up structure disposed on the insulating material and including a second insulating body and a build-up wiring layer. A material of the first insulating body has a coefficient of thermal expansion (CTE) less than a CTE of the second insulating body, and the insulating material has a CTE less than a CTE of a material of the second insulating body.

A radiofrequency transmission/reception device includes a first and a second conductive wire element, a first far-field transmission/reception chip and a second near-field transmission/reception chip. The first and the second wire element combine with the characteristic impedance of the second transmission/reception chip in order to form a coupling device associated with the first transmission/reception chip at the operating frequency of the first chip. The first and the second wire element combine with the characteristic impedance of the first transmission/reception chip in order to form a coupling device associated with the second transmission/reception chip at the operating frequency of the second chip.

A package structure includes a semiconductor die, an antenna substrate structure, and a redistribution layer. The semiconductor die is laterally wrapped by a first encapsulant. The antenna substrate structure is disposed over the semiconductor die, wherein the antenna substrate structure includes a circuit substrate and at least one antenna element inlaid in the circuit substrate. The redistribution layer is disposed between the semiconductor die and the antenna substrate structure, wherein the at least one antenna element is electrically connected with the semiconductor die through the circuit substrate and the redistribution layer. The at least one antenna element includes patch antennas.

An antenna substrate includes: a first substrate including an antenna pattern disposed on an upper surface of the first substrate; a second substrate having a first planar surface, an area of which is smaller than an area of a planar surface of the first substrate; and a flexible substrate connecting the first and second substrates to each other and bent to allow the first planar surface of the second substrate to face a side surface of the first substrate, which is perpendicular to the upper surface of the first substrate.

A chip package includes a first substrate, a second substrate, a first conductive layer, and a metal layer. The first substrate has a bottom surface and an inclined sidewall adjoining the bottom surface, and an obtuse angle is between the bottom surface and the inclined sidewall. The second substrate is over the first substrate and has a portion that laterally extends beyond the inclined sidewall of the first substrate. The first conductive layer is between the first substrate and the second substrate. The metal layer is on said portion of the second substrate, on the bottom surface and the inclined sidewall of the first substrate, and electrically connected to an end of the first conductive layer.

Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization layer (i.e., at the “backside” of an IC structure). In some embodiments, such a field plate may be implemented as a through-silicon via (TSV) extending from the back/bottom face of the substrate towards the III-N semiconductor material. Implementing field plates at the backside may provide a viable approach to changing the distribution of electric field at a transistor drain and increasing the breakdown voltage of an III-N transistor without incurring the large parasitic capacitances associated with the use of metal field plates provided above the polarization material. In addition, backside field plates may serve as a back barrier for advantageously reducing drain-induced barrier lowering.