An antenna apparatus includes a ground pattern having a through-hole; an antenna pattern disposed above the ground pattern and configured to either one or both of transmit and receive a radio-frequency (RF) signal; a feed via penetrating through the through-hole and having one end electrically connected to the antenna pattern; and a meta member comprising a plurality of cells repeatedly arranged and spaced apart from each other, each of the plurality of cells comprising a plurality of conductive patterns, and at least one conductive via electrically connecting the plurality of conductive patterns to each other, wherein the meta member is disposed along at least portions of side boundaries of the antenna pattern above the ground pattern, and extends above the antenna pattern.

A radio frequency module includes: a module board including first and second principal surfaces; first and second power amplifiers on the first principal surface; external-connection terminals on the second principal surface; and first and second via conductors connecting the first and second principal surfaces. The first and second via conductors are spaced apart in the module board, one end of the first via conductor is connected to a first ground electrode of the first power amplifier, the other end of the first via conductor is connected to a first external-connection terminal, one end of the second via conductor is connected to a second ground electrode of the second power amplifier, the other end of the second via conductor is connected to a second external-connection terminal, and the first and second via conductors each penetrate through the module board in a direction normal to the first and second principal surfaces.

A method of forming a self-aligned waveguide is provided. The method includes providing a radio frequency (RF) interposer. The RF interposer includes a non-conductive substrate, a radiating element formed on the non-conductive substrate, and a cavity formed in the non-conductive substrate. A packaged semiconductor die is affixed in the cavity of the RF interposer. A conductive material is dispensed to form a conductive path between a conductive connector of the packaged semiconductor die and the radiating element.

An antenna device and a method for manufacturing the same are provided. The antenna device includes a carrier and an antenna element. The carrier includes a plurality of pads and has a surface exposing the pads. The antenna element is disposed above the pads. A lateral surface of one of the pads is farther from a central axis of the antenna element substantially perpendicular to the surface than from a lateral surface of the antenna element.

A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.

The present disclosure provides an antenna package structure and an antenna packaging method. The package structure includes a rewiring layer, wherein the rewiring layer comprises a first dielectric layer and a first metal wiring layer in the first dielectric layer; metal connecting column, formed on the first metal wiring layer of the rewiring layer; a packaging layer, disposed on the rewiring layer, an antenna metal layer, formed on the packaging layer, an antenna circuit chip, bonded to the first metal layer of the rewiring layer, and electrically connected to the antenna metal layer through the metal connecting column; and a metal bump, formed on the first metal wiring layer of the rewiring layer, to achieve electrical lead-out of the rewiring layer.

A radio-frequency module includes a module substrate, a power amplifier, and a control circuit configured to control the power amplifier. The control circuit includes a temperature sensor. The power amplifier and the control circuit are stacked one on top of another on a principal surface of the module substrate.

A module includes a substrate including a first surface, at least one first component mounted on the first surface, a shield member mounted on the first surface to cover the first component, and a first sealing resin arranged at least between the shield member and the first surface. The shield member includes a top surface portion in a form of a plate and a plurality of leg portions that extend from the top surface portion toward the first surface.

A method includes forming a layer stack with at least one electrically insulating layer structure and at least one patterned electrically conductive layer structure on a temporary carrier, the layer stack includes a lower surface adjoining the temporary carrier and an upper surface opposite to the lower surface; mounting a first component at the upper surface; placing a first frame structure at the upper surface, the first frame structure surrounding at least partially the first component; covering the first component with a first coating material, the first coating material spatially extending at least partially into voids at or within the first frame structure and into voids at or within the layer stack; and removing the temporary carrier. The lower surface of the layer stack is an even surface. The opposite upper surface of the layer stack is an uneven surface. An electronic package can be manufactured with the described method.

In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.