H01L2223/6677

PACKAGE SUBSTRATE EMPLOYING INTEGRATED SLOT-SHAPED ANTENNA(S), AND RELATED INTEGRATED CIRCUIT (IC) PACKAGES AND FABRICATION METHODS
20230014567 · 2023-01-19 ·

Package substrates employing integrated slot-shaped antenna(s), and related integrated circuit (IC) packages and fabrication methods. The package substrate can be provided in a radio-frequency (RF) IC (RFIC) package. The package substrate includes one or more slot-shaped antennas each formed from a slot disposed in the metallization substrate that can be coupled to the RFIC die for receiving and radiating RF signals. The slot-shaped antenna includes a conductive slot disposed in at least one metallization layer in the package substrate. A metal interconnect in a metallization layer in the package substrate is coupled to the conductive slot to provide an antenna feed line for the slot-shaped antenna. In this manner, the slot-shaped antenna being integrated into the metallization substrate of the IC package can reduce the area in the IC package needed to provide an antenna and/or provide other directions of antenna radiation patterns for enhanced directional RF performance.

CIP PACKAGE
20230018396 · 2023-01-19 ·

An electronic device and a CIP (connector-in-package) package used therein. The CIP package can includes a semiconductor chip, an RF connector, and a carrier substrate. The carrier substrate is for carrying the semiconductor chip and the RF connector and electrically connected to the semiconductor chip and the RF connector to allow the semiconductor chip to transmit RF signal through the RF connector.

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

In one example, a semiconductor device, includes a substrate having a substrate top side, a substrate bottom side, a substrate dielectric structure, and a substrate conductive structure. The substrate conductive structure includes a transceiver pattern proximate to a substrate top side. An antenna structure includes an antenna dielectric structure coupled to the substrate top side, an antenna conductive structure having an antenna element, and a cavity below the antenna element. The antenna element overlies the transceiver pattern. The cavity includes a cavity ceiling, a cavity base, and a cavity sidewall between the cavity ceiling and the cavity base. Either a bottom surface of the antenna element defines the cavity ceiling and a perimeter portion of the antenna element is fixed to the antenna dielectric structure, or the antenna dielectric structure includes a body portion having a bottom surface that defines the cavity ceiling and the antenna element is vertically spaced apart from the bottom surface of the body portion. An semiconductor component is coupled to a bottom side of the substrate and is coupled to the transceiver pattern. Other examples and related methods are also disclosed herein.

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVEGUIDE AND METHOD THEREFOR

A method of forming a self-aligned waveguide is provided. The method includes forming a first alignment feature on a packaged semiconductor device and a second alignment feature on a waveguide structure. A solder material is applied to the first alignment feature or the second alignment feature. The waveguide structure is placed onto the packaged semiconductor device such that the second alignment feature overlaps the first alignment feature. The solder material is reflowed to cause the waveguide structure to align with the packaged semiconductor device.

SEMICONDUCTOR PACKAGE

A semiconductor package includes an antenna structure including an antenna member configured to transmit and receive a signal through the first surface in the dielectric layer, a connection via extending from the antenna member toward the second surface, and a ground member spaced apart from the connection via; a frame surrounding the side surface of the antenna structure; a first encapsulant covering at least a portion of the antenna structure and the frame; a redistribution structure on the second surface and including an insulating layer in contact with the antenna structure and the frame, and a redistribution conductor configured to be electrically connected to the ground member and the connection via in the insulating layer; a first semiconductor chip on the redistribution structure and electrically connected to the antenna member through the redistribution conductor; a second encapsulant encapsulating the first semiconductor chip on the redistribution structure; and a shielding layer surrounding a surface of the second encapsulant.

PACKAGE STRUCTURE

A package structure including a first radio frequency die, a second radio frequency die, an insulating encapsulant, a redistribution circuit structure, a first oscillation cavity and a second oscillation cavity is provided. A first frequency range of the first radio frequency die is different from a second frequency range of the second radio frequency die. The insulating encapsulant laterally encapsulates the first radio frequency die and the second radio frequency die. The redistribution circuit structure is disposed on the first radio frequency die, the second die and the insulating encapsulant. The first oscillation cavity is electrically connected to the first radio frequency die, and the second oscillation cavity is electrically connected to the second radio frequency die.

SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device package includes a substrate and an antenna module. The substrate has a first surface and a second surface opposite to the first surface. The antenna module is disposed on the first surface of the substrate with a gap. The antenna module has a support and an antenna layer. The support has a first surface facing away from the substrate and a second surface facing the substrate. The antenna layer is disposed on the first surface of the support. The antenna layer has a first antenna pattern and a first dielectric layer.

Terahertz element and semiconductor device

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

Antenna package structure and antenna packaging method

The present disclosure provides an antenna package structure and an antenna packaging method. The package structure includes an antenna circuit chip, a first packaging layer, a first rewiring layer, an antenna structure, a second metal connecting column, a third packaging layer, a second antenna metal layer, and a second metal bump. The antenna circuit chip, the antenna structure, and the second antenna metal layer are interconnected by using the rewiring layer and the metal connecting column.

Antenna module

An antenna module includes a ground layer including a through-hole; a feed via disposed to pass through the through-hole; a patch antenna pattern spaced apart from the ground layer and electrically connected to one end of the feed via; a coupling patch pattern spaced apart from the patch antenna pattern; a first dielectric layer to accommodate the patch antenna pattern and the coupling patch pattern; a second dielectric layer to accommodate at least a portion of the feed via and the ground layer; and electrical connection structures disposed between the first dielectric layer and the second dielectric layer to separate the first dielectric layer from the second dielectric layer.