H01L2224/02379

METHOD FOR FABRICATING A CHIP PACKAGE

A first mask and a second mask are sequentially provided to perform a multi-step exposure and development processes. Through proper overlay design of the first mask and the second mask, conductive wirings having acceptable overlay offset are formed.

FACE-TO-FACE THROUGH-SILICON VIA MULTI-CHIP SEMICONDUCTOR APPARATUS WITH REDISTRIBUTION LAYER PACKAGING AND METHODS OF ASSEMBLING SAME
20210391238 · 2021-12-16 ·

Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.

Three dimensional integrated circuits stacking approach

A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer are provided. In some embodiments, the semiconductor package has a plurality of through substrate vias (TSVs) extending through an interposer substrate. A redistribution structure is arranged over a first surface of the interposer substrate, and a first die is bonded to the redistribution structure. An edge of the first die is beyond a nearest edge of the interposer substrate. A second die is bonded to the redistribution structure. The second die is laterally separated from the first die by a space.

Method of Fabricating Redistribution Circuit Structure
20210384075 · 2021-12-09 ·

A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Semiconductor structure

A semiconductor structure includes a first interconnect structure, a second interconnect structure, a molding, a first seal ring and a second seal ring. The molding surrounds the die. The molding and the die are disposed between the first interconnect structure and the second inter connect structure. The first seal ring is disposed in the first interconnect structure. The second seal ring is disposed in the second interconnect structure.

Fan-out semiconductor package

A fan-out semiconductor package includes: a frame including insulating layers, wiring layers, and connection via layers, and having a recess portion and a stopper layer disposed on a bottom surface of the recess portion; a semiconductor chip disposed in the recess portion; a resin layer disposed on an active surface of the semiconductor chip; an encapsulant covering at least portions of side surfaces of the semiconductor chip and the resin layer and filling at least portions of the recess portion; a first redistribution layer disposed on the resin layer and the encapsulant; first redistribution vias penetrating through the resin layer to fill via holes in the resin layer exposing at least portions of the connection pads and electrically connecting the connection pads and the first redistribution layer to each other; and a connection member disposed on the resin layer and the encapsulant and including one or more second redistribution layers.

FAN-OUT SEMICONDUCTOR PACKAGE

A fan-out semiconductor package includes a first connection structure having first and second surfaces, a first semiconductor chip disposed on the first surface, a first encapsulant disposed on the first surface and covering at least a portion of the first semiconductor chip, a second semiconductor chip disposed on the second surface, one or more first metal members disposed on the second surface, one or more second metal members disposed on the second surface, a second encapsulant disposed on the second surface and respectively covering at least portions of the second semiconductor chip and the first and second metal members, and a second connection structure disposed on an opposite side of a side of the second encapsulant, on which the first connection structure is disposed.

SEMICONDUCTOR PACKAGE WITH IMPROVED INTERPOSER STRUCTURE

A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulting features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulting features are arranged in a matrix and face a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the plurality of insulting features.

DISPLAY SUBSTRATE AND METHOD FOR DETECTING BROKEN FANOUT WIRE OF DISPLAY SUBSTRATE

The present application provides a method for detecting a broken fanout wire of a display substrate, and a display substrate, and belongs to the field of display technology. In the method for detecting a broken fanout wire, the display substrate includes a base substrate having first and second surfaces opposite to each other, and a plurality of connection structures disposed at intervals on the first surface; and each connection structure includes first and second pads and a fanout wire electrically connecting the first pad to the second pad. The method for detecting a broken fanout wire includes: forming at least one detection unit, which includes: connecting at least two connection structures in series through a connecting part; and measuring a head and an end of the detection unit to obtain resistance of the detection unit, and determining whether there is a broken fanout wire in the detection unit.