A method for forming a package structure is provided. The method includes forming a first interconnect structure over a carrier substrate and disposing a first die structure over the first interconnect structure. The method includes forming a dam structure over the first die structure. The method also includes forming a protection layer over a second interconnect structure. The method further includes bonding the second interconnect structure over the dam structure. In addition, the method includes forming a package layer between the first interconnect structure and the second interconnect structure. The method also includes removing the protection layer.

A method of manufacturing a semiconductor structure includes following operations. A substrate is provided. A first die is disposed over the substrate. A second die is provided. The second die includes a via extended within the second die. The second die is disposed over the substrate. A molding is formed around the first die and second die. An interconnect structure is formed. The interconnect structure includes a dielectric layer and a conductive member. The dielectric layer is disposed over the molding, the first die and the second die. The conductive member is surrounded by the dielectric layer. The via is formed by removing a portion of the second die to form a recess extended within the second die and disposing a conductive material into the recess.

A redistribution structure includes a first dielectric layer, a pad pattern, and a second dielectric layer. The pad pattern is disposed on the first dielectric layer and includes a pad portion and a peripheral portion. The pad portion is embedded in the first dielectric layer, wherein a lower surface of the pad portion is substantially coplanar with a lower surface of the first dielectric layer. The peripheral portion surrounds the pad portion. The second dielectric layer is disposed on the pad pattern and includes a plurality of extending portions extending through the peripheral portion.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

A semiconductor package includes a semiconductor chip having chip pads on a first surface and having first and second side surfaces opposite to each other and third and fourth side surfaces opposite to each other, a molding member covering the third and fourth side surfaces and exposing the first and second side surfaces of the semiconductor chip, a redistribution wiring layer on a lower surface of the molding member to cover the first surface of the semiconductor chip and including a plurality of redistribution wirings electrically connected to the chip pads, and outer connection members arranged in a connection region defined on an outer surface of the redistribution wiring layer and electrically connected to the redistribution wirings.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

A package structure including a first circuit board, a second circuit board, an encapsulant, a plurality of conductive terminals, and a package device is provided. The first circuit board has a first top surface and a first bottom surface opposite to each other. The second circuit board has a second top surface and a second bottom surface opposite to each other. The encapsulant encapsulates the first and second circuit boards. The conductive terminals are disposed on the first or second bottom surface and electrically connected to the first or second circuit board. The package device is disposed on the first or second top surface and electrically connected to the first and second circuit boards. The package device includes a first chip, a second chip, a chip encapsulant, a circuit layer, and a plurality of conductive package terminals. A manufacturing method of a package structure is also provided.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

A package structure and method of forming the same are provided. The package structure includes a die, a via, an encapsulant, an adhesion promoter layer, and a polymer layer. The via is laterally aside the die. The encapsulant laterally encapsulates the die and the via. The adhesion promoter layer is sandwiched between the via and the encapsulant. The encapsulant comprises a portion aside the via and under the adhesion promoter layer, and the portion of the encapsulant is sandwiched between the adhesion promoter layer and the polymer layer.