Disclosed herein are structures and techniques for exposing circuitry in die testing. For example, in some embodiments, an integrated circuit (IC) die may include: first conductive contacts at a first face of the die; second conductive contacts at a second face of the die; die stack emulation circuitry; other circuitry; and a switch coupled to the second conductive contacts, the die stack emulation circuitry, and the other circuitry, wherein the switch is to couple the second conductive contacts to the other circuitry when the switch is in a first state, and the switch is to couple the die stack emulation circuitry to the other circuitry when the switch is in a second state different from the first state.

A method for forming a chip package structure is provided. The method includes forming a conductive pad over a carrier substrate. The method includes forming a substrate layer over the carrier substrate, wherein the conductive pad is embedded in the substrate layer, and the substrate layer includes fibers. The method includes forming a through hole in the substrate layer and exposing the conductive pad. The method includes forming a conductive pillar in the through hole. The method includes forming a recess in the substrate layer. The method includes disposing a chip in the recess. The method includes forming a molding layer in the recess. The method includes forming a redistribution structure over the substrate layer, the conductive pillar, the molding layer, and the chip. The method includes removing the carrier substrate.

An electronic package structure includes an electronic structure, a wiring structure, an electrical contact and a support layer. The wiring structure is located over the electronic structure. The electrical contact connects the wiring structure and the electronic structure. The support layer is disposed around the electrical contact and has a surface facing the electrical contact. The surface includes at least one inflection point in a cross-sectional view.

A package structure and a formation method of a package structure are provided. The package structure includes a circuit substrate and a die package bonded to the circuit substrate through bonding structures. The package structure also includes a warpage-control element attached to the circuit substrate. The warpage-control element has a protruding portion extending into the circuit substrate. The warpage-control element has height larger than that of the die package.

Semiconductor devices having one or more vias filled with an electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side. A via can extend between the first and second sides, and a conductive material in the via can extend beyond the second side of the substrate to define a projecting portion of the conductive material. The semiconductor device can have a tall conductive pillar formed over the second side and surrounding the projecting portion of the conductive material, and a short conductive pad formed over the first side and electrically coupled to the conductive material in the via.

A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

A package comprising a substrate, an integrated device, and an interconnect integrated device. The substrate includes a first surface and a second surface. The substrate further includes a plurality of interconnects. The integrated device is coupled to the substrate. The interconnect integrated device is coupled to a surface of the substrate. The integrated device, the interconnect integrated device and the substrate are configured to provide an electrical path for an electrical signal of the integrated device, that travels through at least the substrate, then through the interconnect integrated device and back through the substrate.

A semiconductor package includes: a package substrate; a first semiconductor chip disposed on the package substrate; a heat-dissipation pattern disposed on the first semiconductor chip; a first mold layer disposed on the package substrate and at least partially surrounding the first semiconductor chip and the heat-dissipation pattern; a redistribution layer disposed on the first mold layer; a penetration electrode penetrating the first mold layer and coupled to the package substrate; and a connection pattern disposed on the penetration electrode, and connecting the redistribution layer to the penetration electrode, wherein a top surface of the heat-dissipation pattern and a top surface of the connection pattern are exposed by the first mold layer.

A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

A stack package and a method of manufacturing the stack package are provided. The method includes: attaching a first semiconductor device onto a first surface of a first package substrate; attaching a molding resin material layer onto a first surface of a second package substrate; arranging the first surface of the first package substrate and the first surface of the second package substrate to face each other; compressing the first package substrate and the second package substrate while reflowing the molding resin material layer; and hardening the reflowed molding resin material layer.