A display device includes a substrate, conductive pads arranged on the substrate over a plurality of rows, and a drive circuit chip including bumps arranged over a plurality of rows to be electrically connected with the conductive pads, and the conductive pads arranged in a same row are arranged in parallel, and the bumps arranged in a same row are arranged in a zigzag form so as to be partially shifted.

A die stack structure includes a first die, a dielectric material layer, a first bonding dielectric layer and a second die. The first die has an active surface and a rear surface opposite to the active surface. The first die includes a through-substrate via (TSV) therein. The TSV protrudes from the rear surface of the first die. The dielectric material layer surrounds and wraps around the first die. The first bonding dielectric layer is disposed on a top surface of the dielectric material layer and the rear surface of the first die and covers the TSV, wherein the TSV penetrates through the first bonding dielectric layer. The second die is disposed on the first die and has an active surface and a rear surface opposite to the active surface. The second die has a second bonding dielectric layer and a conductive feature disposed in the second bonding dielectric layer. The first bonding dielectric layer separates the second bonding dielectric layer from the dielectric material layer, and the first die and the second die are bonded through bonding the second bonding dielectric layer with the first bonding dielectric layer and bonding the conductive feature with the TSV.

A display device includes a substrate, conductive pads arranged on the substrate over a plurality of rows, and a drive circuit chip including bumps arranged over a plurality of rows to be electrically connected with the conductive pads, and the conductive pads arranged in a same row are arranged in parallel, and the bumps arranged in a same row are arranged in a zigzag form so as to be partially shifted.

A die stack structure includes a first die, a dielectric material layer, a first bonding dielectric layer and a second die. The first die has an active surface and a rear surface opposite to the active surface. The first die includes a through-substrate via (TSV) therein. The TSV protrudes from the rear surface of the first die. The dielectric material layer surrounds and wraps around the first die. The first bonding dielectric layer is disposed on a top surface of the dielectric material layer and the rear surface of the first die and covers the TSV, wherein the TSV penetrates through the first bonding dielectric layer. The second die is disposed on the first die and has an active surface and a rear surface opposite to the active surface. The second die has a second bonding dielectric layer and a conductive feature disposed in the second bonding dielectric layer. The first bonding dielectric layer separates the second bonding dielectric layer from the dielectric material layer, and the first die and the second die are bonded through bonding the second bonding dielectric layer with the first bonding dielectric layer and bonding the conductive feature with the TSV.

An electronic component module includes a substrate; a plurality of electronic components mounted on the substrate; and a heatsink fixed to the substrate.

The substrate includes first, second and third substrates. The electronic components include first components and second components, and the first substrate and the second substrate are arranged such that the surface of the first and second substrates mutually face each other.

The third substrate is disposed between the first substrate and the second substrate, whereby the first, second and third substrates are continuous. The heatsink includes a fixed portion fixed to at least one substrate among the first substrate, the second substrate and the third substrate, and a side portion located in a side area of a region sandwiched between the first substrate and the second substrate. The side portion is continuous with the fixed portion via a bend portion having a bent shape.

A display device includes a substrate, conductive pads arranged on the substrate over a plurality of rows, and a drive circuit chip including bumps arranged over a plurality of rows to be electrically connected with the conductive pads, and the conductive pads arranged in a same row are arranged in parallel, and the bumps arranged in a same row are arranged in a zigzag form so as to be partially shifted.

A multi-conductor interconnect for a microelectronic device incorporates multiple conductors and integrated shielding for the conductors. The multi-conductor interconnect includes first and second groups of conductors interleaved with one another within a dielectric structure. One of the groups of conductors may be coupled to a reference voltage node to provide shielding for the other group of conductors. The multi-conductor interconnect may further include a shield layer extending over some portion, or all, of the conductors of the first and second groups.

An electronic device includes a top carrier having a first top surface and a first bottom surface, a first electronic element formed on the first top surface, a second electronic element formed on the first bottom surface, a bottom carrier below the top carrier and having a second top surface near the top carrier, and a controller formed on the second top surface.

A method including coupling a device substrate to a carrier substrate; aligning a portion of the device substrate to a host substrate; separating the portion of the device substrate from the carrier substrate; and after separating the portion of the device substrate, coupling the portion of the device substrate to the host substrate. A method including coupling a device substrate to a carrier substrate with an adhesive between a device side of the device substrate and the carrier substrate; after coupling the device substrate to the carrier substrate, thinning the device substrate; aligning a portion of the thinned device substrate to a host substrate; separating the portion of the device substrate from the carrier substrate; and coupling the separated portion of the device substrate to the host substrate. An apparatus including a substrate including a submicron thickness and a device layer coupled to a host substrate in a stacked arrangement.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a first semiconductor die, a second semiconductor die in a stacked arrangement with the first semiconductor die, and a flexible interposer disposed between the first semiconductor die and the second semiconductor die. The flexible interposer may include a first flexible layer, a second flexible layer, and a conductive trace disposed between the first flexible layer and the second flexible layer. A spacer portion of the flexible interposer may space the first semiconductor die from the second semiconductor die. A connecting portion of the flexible interposer may extend from the spacer portion beyond edges of the first semiconductor die and the second semiconductor die.