H01L2225/06582

Wafer-level package structure

Wafer-level packaging structure is provided. First chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.

Semiconductor package including mold layer having curved cross-section shape

Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the t least one side surface. The first adhesive layer and the first resin layer contact each other.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
20230018676 · 2023-01-19 · ·

Provided is a semiconductor package, including a lower semiconductor chip, a plurality of semiconductor chips that are disposed on the lower semiconductor chip in a first direction perpendicular to a top surface of the lower semiconductor chip, a plurality of nonconductive layers disposed between the plurality of semiconductor chips, a nonconductive pattern that extends from the nonconductive layers and is disposed on lateral surfaces of at least one of the plurality of semiconductor chips, a first mold layer disposed a top surface of the nonconductive pattern, and a second mold layer disposed a lateral surface of the nonconductive pattern and a lateral surface of the first mold layer, wherein the nonconductive pattern and the first mold layer are disposed between the second mold layer and lateral surfaces of the plurality of semiconductor chips.

SEMICONDUCTOR PACKAGE

A semiconductor package includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip; an underfill material layer interposed between the first semiconductor chip and the second semiconductor chip; and a first dam structure disposed on the first semiconductor chip. The first dam structure extends along an edge of the second semiconductor chip and includes unit dam structures apart from each other with a slit therebetween. A vertical level of an upper surface of the first dam structure is located between a vertical level of a lower surface of the second semiconductor chip and a vertical level of an upper surface of the second semiconductor chip. A first sidewall of the first dam structure is in contact with the underfill material layer and includes a flat surface parallel to a sidewall of the second semiconductor chip that faces the first sidewall of the first dam structure.

SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE BUMPS TO IMPROVE EMI/RFI SHIELDING

A semiconductor device has shielding to prevent transmission and/or reception of EMI and/or RFI radiation. The semiconductor device comprises a substrate including grounded contact pads around a periphery of the substrate, exposed at one or more edges of the substrate. A bump made of gold or other non-oxidizing conductive material may be formed on the contact pads, for example using ultrasonic welding to remove an oxidation layer between the contact pads and the conductive bumps. The conductive bumps electrically couple to a conductive coating applied around the periphery of the semiconductor device.

SEMICONDUCTOR PACKAGE HAVING STIFFENER STRUCTURE
20220399287 · 2022-12-15 · ·

A semiconductor package including a package base substrate, an interposer on the package base substrate, a plurality of semiconductor chips on the interposer, and a stiffener structure including a stiffener frame and a stiffener extension portion, the stiffener frame being on the package base substrate and apart from the interposer, the stiffener extension portion extending from the stiffener frame, spaced apart from the plurality of semiconductor chips, and extending onto the interposer to have a portion on the interposer, and the stiffener frame being an integral structure with the extension portion, may be provided.

SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE

A semiconductor package includes a first semiconductor chip, a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip, and an insulating adhesive layer between the first semiconductor chip, and each of the plurality of second semiconductor chips, each of the plurality second conductor chips, and the insulating adhesive layer including an adhesive fillet protruding from between at least the first semiconductor chip and each of the plurality of second semiconductor chips, wherein a grooving recess is defined by the first semiconductor chip, the plurality of second semiconductor chips, and the insulating adhesive layer, the grooving recess including a first recess and a second recess adjacent to the first recess, an uppermost surface of the adhesive fillet and the first semiconductor chip defines the first recess, and an uppermost surface of the first semiconductor chip to a surface inside the first semiconductor chip defines the second recess.

Semiconductor Device and Method of Forming Vertical Interconnect Structure for POP Module

A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.

Substrate Component Layout and Bonding Method for Increased Package Capacity
20220375896 · 2022-11-24 ·

A method and apparatus for substrate component layout and bonding for increased package capacity. According to certain embodiments, a wire-bonding finger strip is disposed between a flip-chip die and a NAND die stack to reduce a keep out zone (KOZ) required for an underfill material dispensed beneath the flip-chip die. To further inhibit the flow of the underfill material and further reduce the KOZ, a solder mask may be placed adjacent to the flip-chip. According to certain embodiments, there may be at least three sides of the flip-chip that may have such an adjacent solder mask placement. The three sides of the flip-chip according to such embodiments may be those non-adjacent to the wire-bonding finger strip.