Semiconductor devices having interconnect structures with vertically offset bonding surfaces, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate at least partially covered by a first dielectric material having an upper surface, and an interconnect structure extending therefrom. The interconnect structure can include a plurality of conductive elements, and a continuous region of a first insulating material at least partially between the plurality of conductive elements. The plurality of conductive elements and the continuous region can have coplanar end surfaces. The interconnect structure can further include a perimeter structure at least partially surrounding the plurality of conductive elements and the continuous region. The perimeter structure can have an uppermost surface that can be vertically offset from the upper surface of the first dielectric material and/or the coplanar end surfaces.

According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is provided between the substrate and the memory cell. The second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.

A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

Representative implementations of devices and techniques provide correction for a defective die in a wafer-to-wafer stack or a die stack. A correction die is coupled to a die of the stack with the defective die. The correction die electrically replaces the defective die. Optionally, a dummy die can be coupled to other die stacks of a wafer-to-wafer stack to adjust a height of the stacks.

A wafer structure includes a semiconductor substrate that includes a chip region and a scribe lane region. A first dielectric layer is on a first surface of the semiconductor substrate, a second dielectric layer is on the first dielectric layer. A dielectric pattern is between the first dielectric layer and the second dielectric layer. A through via that penetrates the first surface and a second surface at the chip region of the semiconductor substrate, and a conductive pad is in the second dielectric layer and on the through via. The dielectric pattern includes an etch stop pattern on the chip region of the semiconductor substrate and in contact with a bottom surface of the conductive pad, and an alignment key pattern on the scribe lane region of the semiconductor substrate.

A printed structure includes a substrate comprising a substrate surface, a substrate circuit disposed in or on in a circuit area of the substrate surface, a substrate post protruding from the substrate surface exterior to the circuit area, and a component having a component top side and a component bottom side opposite the component top side. The component bottom side can be disposed on the substrate post and adhered to the substrate surface forming an air gap between the component bottom side and the substrate circuit. The substrate post can comprise a substrate post material that is a cured adhesive. Some embodiments comprise a substrate electrode and the component comprises an electrically conductive connection post extending from the component bottom side toward the substrate in electrical contact with the substrate electrode.

A semiconductor device having a three-dimensional structure includes a first wafer including a first bonding pad on one surface thereof; a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer; a plurality of anti-warpage grooves on the one surface of the first wafer, and laid out in a stripe shape; and a plurality of anti-warpage ribs on the one surface of the second wafer and coupled respectively to the plurality of anti-warpage grooves, and laid out in a stripe shape.

A stack package is disclosed. A first semiconductor die and a supporter are disposed on a package substrate. The supporter may include a second side facing a first side of the first semiconductor die having a substantially inclined surface. A second semiconductor die is stacked on the first semiconductor die and on the supporter. An encapsulant layer is formed to fill a portion between the supporter and the first semiconductor die.

A display device includes: a circuit substrate including a plurality of pixel circuit units and a plurality of pads on a first surface thereof, the plurality of pads being electrically connected to the pixel circuit units; a display substrate on the circuit substrate and including a plurality of light emitting elements electrically connected to the pixel circuit units; a circuit board on the circuit substrate and including a plurality of circuit board pads electrically connected to the pads; a heat dissipation substrate on a second surface of the circuit substrate, the second surface being opposite to the first surface; and a cover substrate on the heat dissipation substrate and partially overlapping the circuit substrate and the circuit board. Each of the plurality of pads is in direct contact with at least one of the plurality of circuit board pads.

A semiconductor device includes a semiconductor substrate having a first major surface and a second major surface opposite the first major surface, a first layer of dielectric material over the first major surface, and a second layer of dielectric material over the second major surface. The first layer includes a plurality of recesses, and the second layer includes a plurality of protrusions. Each of the plurality of recesses are defined by a shape, and each of the plurality of protrusions are vertically aligned with a corresponding one of the plurality of recesses and are defined by the shape of the corresponding one of the plurality of recesses.