Certain aspects of the present disclosure generally relate to an integrated circuit assembly. One example integrated circuit assembly generally includes a first reconstituted assembly, a second reconstituted assembly, and a third reconstituted assembly. The first reconstituted assembly comprises at least one passive component and a first bonding layer. The second reconstituted assembly is disposed above the first reconstituted assembly and comprises one or more first semiconductor dies, a second bonding layer bonded to the first bonding layer of the first reconstituted assembly, and a third bonding layer. The third reconstituted assembly is disposed above the second reconstituted assembly and comprises one or more second semiconductor dies and a fourth bonding layer bonded to the third bonding layer of the second reconstituted assembly.

A semiconductor memory device comprises a bit line and source line, a first memory cell and first and second transistors connected therebetween, a second memory cell and third and fourth transistors connected therebetween, and first through fifth wirings connected to the first and the second memory cells and gate electrodes of the first to the fourth transistors. At a first timing of a read operation, voltages of the first through third wirings are larger than voltages of the fourth and fifth wirings. At a second timing, voltages of the second and third wirings are larger than voltages of the fourth and fifth wirings. At a third timing, voltages of the fourth and fifth wirings are larger than their voltages at the second timing. At a fourth timing, voltages of the second and third wirings are larger than a voltage of the fourth wiring.

In a semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring.

A vertical-wire package-in-package includes at least two memory-die stacks that form respective memory modules that are stacked vertically on a bond-wire board. Each memory die in the memory-die stack includes a vertical bond wire that emerges from a matrix for connection. The matrix encloses the memory-die stack, the spacer, and a redistribution layer. At least two memory modules are assembled in a vertical-wire package-in-package.

A semiconductor device and method of manufacture are provided whereby an interposer and a first semiconductor device are placed onto a carrier substrate and encapsulated. The interposer comprises a first portion and conductive pillars extending away from the first portion. A redistribution layer located on a first side of the encapsulant electrically connects the conductive pillars to the first semiconductor device.

A semiconductor package includes a redistribution layer and a semiconductor chip provided on the redistribution layer having a first surface and a second surface opposite to the first surface. The semiconductor chip includes a first chip pad and a second chip pad which are exposed at the first surface. The semiconductor package further includes a capacitor chip disposed between the first surface and the redistribution layer and including a capacitor chip pad connected to the first chip pad, an insulating layer covering the first surface and the capacitor chip, and a conductive post being in contact with the second chip pad and penetrating the insulating layer so as to be connected to the redistribution layer. The conductive post may be spaced apart from the capacitor chip.

A semiconductor memory device comprises a bit line and source line, a first memory cell and first and second transistors connected therebetween, a second memory cell and third and fourth transistors connected therebetween, and first through fifth wirings connected to the first and the second memory cells and gate electrodes of the first to the fourth transistors. At a first timing of a read operation, voltages of the first through third wirings are larger than voltages of the fourth and fifth wirings. At a second timing, voltages of the second and third wirings are larger than voltages of the fourth and fifth wirings. At a third timing, voltages of the fourth and fifth wirings are larger than their voltages at the second timing. At a fourth timing, voltages of the second and third wirings are larger than a voltage of the fourth wiring.

In the semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring.

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

A semiconductor device and method of manufacture are provided whereby an interposer and a first semiconductor device are placed onto a carrier substrate and encapsulated. The interposer comprises a first portion and conductive pillars extending away from the first portion. A redistribution layer located on a first side of the encapsulant electrically connects the conductive pillars to the first semiconductor device.