An electronic package and manufacturing method thereof are provided. The electronic package includes a substrate, a first encapsulant, a wettable flank and a shielding layer. The substrate includes a first surface, a second surface opposite to the first surface and a side surface connecting the first surface and the second surface. The first encapsulant is disposed on the first surface of the substrate. The wettable flank is exposed from the side surface of the substrate. The shielding layer covers a side surface of the first encapsulant, wherein on the side surface of the substrate, the shielding layer is spaced apart from the wettable flank.

The method for fabricating an electrical module is disclosed. In one example, the method includes providing a bottom unit comprising a plateable encapsulant. Selective areas of the bottom unit are activated thereby turning them into electrically conductive regions. At least one electrical device comprising external contact elements is provided. The method includes placing the electrical device on the bottom unit so that the external contact elements are positioned above at least a first subset of the electrically conductive regions, and performing a plating process on the electrically conductive regions for generating plated regions and for electrically connecting the external contact elements with at least a first subset of the plated regions.

A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes (i) at least one inner dielectric layer, (ii) a plurality of interconnects located in the at least one inner dielectric layer, where the plurality of interconnects includes a pad located on a bottom metal layer of the substrate, (iii) an outer dielectric layer located over the at least one dielectric layer, (iv) at least one routing interconnect coupled to the plurality of interconnects, where the at least one routing interconnect is located over the outer dielectric layer, where the at least one routing interconnect is located below the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect. The package includes a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.

A chip package structure is provided. The chip package structure includes a first redistribution structure having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip over the first surface. The chip package structure includes a first conductive bump connected between the first chip and the first redistribution structure. The chip package structure includes a first conductive pillar over the first surface and electrically connected to the first redistribution structure. The chip package structure includes a second chip over the second surface. The chip package structure includes a second conductive bump connected between the second chip and the first redistribution structure. The chip package structure includes a second conductive pillar over the second surface and electrically connected to the first redistribution structure.

An electronic package is provided, in which at least one first electronic component is arranged on one surface of a circuit structure with circuit layers and a plurality of second electronic components are arranged on the other surface. The first electronic component can electrically bridge two of the plurality of second electronic components via the circuit layers to replace part of the circuit layers of the circuit structure, so that the circuit layers of the circuit structure can maintain a larger wiring specification and reduce the number of circuit layers, thereby improving the process yield.

Certain aspects of the present disclosure generally relate to an integrated circuit assembly. One example integrated circuit assembly generally includes a first reconstituted assembly, a second reconstituted assembly, and a third reconstituted assembly. The first reconstituted assembly comprises at least one passive component and a first bonding layer. The second reconstituted assembly is disposed above the first reconstituted assembly and comprises one or more first semiconductor dies, a second bonding layer bonded to the first bonding layer of the first reconstituted assembly, and a third bonding layer. The third reconstituted assembly is disposed above the second reconstituted assembly and comprises one or more second semiconductor dies and a fourth bonding layer bonded to the third bonding layer of the second reconstituted assembly.

A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.

An electronic package and manufacturing method thereof are provided. The electronic package includes a substrate, a first encapsulant, a wettable flank and a shielding layer. The substrate includes a first surface, a second surface opposite to the first surface and a side surface connecting the first surface and the second surface. The first encapsulant is disposed on the first surface of the substrate. The wettable flank is exposed from the side surface of the substrate. The shielding layer covers a side surface of the first encapsulant, wherein on the side surface of the substrate, the shielding layer is spaced apart from the wettable flank.

The field of the invention is that of producing 3D electronic modules, compatible with components operating beyond 1 GHz. The invention relates to a 3D electronic module featuring an interconnection between a horizontal conductor and a vertical conductor to which it is connected exhibits, in a vertical plane, a non-zero curvature. It also relates to the associated production process.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.