A semiconductor device package is disclosed. The package according to one example includes a base having a main surface made of a metal, a dielectric side wall having a bottom surface facing the main surface, a joining material containing silver (Ag) and joining the main surface of the base and the bottom surface of the side wall to each other, a lead made of a metal joined to an upper surface of the side wall on a side opposite to the bottom surface, and a conductive layer not containing silver (Ag). The conductive layer is provided between the bottom surface and the upper surface of the side wall at a position overlapping the lead when viewed from a normal direction of the main surface. The conductive layer is electrically connected to the joining material, extends along the bottom surface, and is exposed from a lateral surface of the side wall.

An optical sensor and filter assembly is provided and includes an optical sensor, a filter and a mounting structure. The optical sensor includes a detector layer having first and second opposed faces and a read-out integrated circuit (ROIC) to which the first face of the detector layer is hybridized. The filter permits passage of one or more wavelength bands of interest of incident light toward the optical sensor and the mounting structure directly hybridizes the filter to the second face of the detector layer.

A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.

To provide a semiconductor device with improved reliability by suppressing a degree at which heat generated by a semiconductor element is transferred through a heat radiation plate to a bonding portion between a metal electrode and an insulating substrate. The semiconductor device includes a heat radiation plate, at least one insulating substrate, a semiconductor element, and a metal electrode. The at least one insulating substrate is bonded on one main surface of the heat radiation plate, the semiconductor element is bonded on the one main surface via any of the at least one insulating substrate, the metal electrode is bonded on the one main surface via any of the at least one insulating substrate. The heat radiation plate has, in a region between a region where the semiconductor element is bonded and a region where the metal electrode is bonded, a narrowed portion.

Described herein is an apparatus and a method for thermal management. The apparatus includes an integrated circuit (IC) including at least one field effect transistor, wherein each at least one FET comprises a gate, a drain, and a source; and a diamond substrate bonded to the gate, the drain, and the source of each of the at least one FETs, wherein the diamond substrate includes at least one tuning element. The method includes forming at least one FET on an IC, wherein each at least one FET comprises a gate, a drain, and a source; and bonding a diamond substrate to the gate, the drain, and the source of each of the at least one FETs, wherein the diamond substrate includes at least one tuning element.

A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Provided is a resin-sealed semiconductor device that can regulate the thickness of a joining material joining a semiconductor element and a lead frame and inhibit the joining material from leaking out of a proper range. The resin-sealed semiconductor device includes a second lead frame joined via a second joining material above a semiconductor element joined above a heat spreader. The second lead frame has, on a surface thereof opposed to the semiconductor element, a protrusion to regulate a thickness of the second joining material, and a groove formed at a peripheral part of the second joining material.

A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bonding surface that is attached to a surface of the substrate by a die attach material. The bonding surface includes opposing edges that extend along a perimeter of the semiconductor die, and one or more non-orthogonal corners that are configured to reduce stress at an interface between the bonding surface and the die attach material. Related devices and fabrication methods are also discussed.

A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.