Patent classifications
H01L2924/1032
Semiconductor device that uses bonding layer to join semiconductor substrates together
Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.
HYBRID INTEGRATED CIRCUIT ARCHITECTURE
An electronic assembly comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising an integrated circuit contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by direct contact of at least a side surface of said component chip with an attachment metal that fills at least a portion of said through-wafer cavity; said component chip comprising at least one component contact pad on said component chip bottom surface; and a conductor connecting said integrated circuit contact pad and said component contact pad.
System and method for providing 3D wafer assembly with known-good-dies
Systems and methods for providing 3D wafer assembly with known-good-dies are provided. An example method compiles an index of dies on a semiconductor wafer and removes the defective dies to provide a wafer with dies that are all operational. Defective dies on multiple wafers may be removed in parallel, and resulting wafers with all good dies stacked in 3D wafer assembly. In an implementation, the spaces left by removed defective dies may be filled at least in part with operational dies or with a fill material. Defective dies may be replaced either before or after wafer-to-wafer assembly to eliminate production of defective stacked devices, or the spaces may be left empty. A bottom device wafer may also have its defective dies removed or replaced, resulting in wafer-to-wafer assembly that provides 3D stacks with no defective dies.
Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.
Hybrid integrated circuit architecture
An electronic assembly, comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising a wafer contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity joining the top and bottom wafer surfaces; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by direct contact of at least a side surface of said first component chip with an attachment metal that fills at least a portion of said through-wafer cavity; said component chip comprising at least one component contact pad on said component chip top surface; a first conductor connecting said wafer contact pad and said component contact pad.
Fabrication method of packaging structure
Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.
Flexible fan-out wafer level process and structure
A fan-out wafer level package includes: (1) a flexible substrate; (2) a semiconductor component embedded in the flexible substrate, the semiconductor component including an active surface that is exposed from the flexible substrate, the semiconductor component including a bonding pad adjacent to the active surface; (3) a stress buffer layer disposed over the flexible substrate and the semiconductor component, the stress buffer layer defining an opening exposing the bonding pad of the semiconductor component; and (4) an interconnect disposed over the stress buffer layer and including a portion extending into the opening of the stress buffer layer to electrically connect to the bonding pad of the semiconductor component.
METHOD AND APPARATUS TO INCREASE RADAR RANGE
An integrated radar circuit comprising: a first substrate, of a first semiconductor material, said first substrate comprising an integrated transmit and receive radar circuit; a second substrate, of a second semiconductor material, said second substrate comprising at least on through-substrate cavity having cavity walls; at least one discrete transistor chip, of a third semiconductor material, said at least one discrete transistor chip having chip walls and being held in said at least one through-substrate cavity by a metal filling extending from at least one cavity wall to at least one chip wall; a conductor on said second substrate, electrically connecting a portion of said integrated transmit and receive radar circuit to a discrete transistor on said at least one discrete transistor chip.
Dummy metal with zigzagged edges
A structure includes a metal pad, a passivation layer having a portion covering edge portions of the metal pad, and a dummy metal plate over the passivation layer. The dummy metal plate has a plurality of through-openings therein. The dummy metal plate has a zigzagged edge. A dielectric layer has a first portion overlying the dummy metal plate, second portions filling the first plurality of through-openings, and a third portion contacting the first zigzagged edge.
Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
A mounting apparatus of a chip including a mechanism configured to arrange a front surface of a chip and a front surface of a substrate to face each other such that a back surface of the chip is attached to a sheet, the sheet having a first portion corresponding to the selected chip and a the second portion arranged at a periphery of the first portion corresponding to the selected chip in the sheet when seen in a direction perpendicular to the front surface of the substrate; a holding mechanism moving in a direction that is not perpendicular to the front surface of the substrate and arranged to hold the second portion of the sheet; and a pushing mechanism for pushing the back surface of the chip through the first portion of the sheet so that the front surface of the chip is brought close to the front surface of the substrate with the first portion deformed in a state where the second portion is held by the holding mechanism, and configured to release the pushing mechanism from the first portion of the sheet to strip the sheet from the back surface of the chip.