Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and second conductors with ohmic contacts on an intrinsic semiconductor region can function similar to an x-i-y type diode, where each of x and y can be n-type or p-type. Such a diode can be configured to turn on under selected conditions such as an ESD event. Such a structure can be configured so as to provide an effective ESD protection while providing little or substantially nil effect on radio-frequency (RF) operating properties of a device.

A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.

A wireless communication device that has a circuit board, an RF signal module, a capacitive touch-sensing component, or a functional component, and an antenna component is provided. The touch-sensing signal module is disposed on the circuit board. The capacitive touch-sensing component includes a sensing layer and a ground layer. The sensing layer is electrically connected to the touch-sensing signal module. The antenna component includes a feed point and a radiating body. The feed point is disposed on the ground layer and is electrically connected to the RF single module. The radiating body incorporates at least parts of the ground layer. Alternatively, the feed point is disposed on the sensing layer, and the radiating body incorporates at least parts of the sensing layer. Therefore, the radiating body is incorporated into the sensing layer or ground layer of the capacitive touch-sensing component and can save accommodating space.

Apparatus and methods for PIN diode switches for radio frequency electronic systems are provided herein. In certain configurations, a packaged switch including a packaging substrate including a die paddle and a thermally conductive substrate attached to the die paddle, one or more PIN diode switches attached to the thermally conductive substrate, and a driver chip attached to the die paddle and configured to generate a plurality of bias voltages operable to control biasing of the one or more PIN diode switches. The driver chip includes a switching regulator configured to generate a first bias voltage of the plurality of bias voltages and a charge pump configured to generate a second bias voltage of the plurality of bias voltages.

A wireless communication device that has a circuit board, an RF signal module, a capacitive touch-sensing component, or a functional component, and an antenna component is provided. The touch-sensing signal module is disposed on the circuit board. The capacitive touch-sensing component includes a sensing layer and a ground layer. The sensing layer is electrically connected to the touch-sensing signal module. The antenna component includes a feed point and a radiating body. The feed point is disposed on the ground layer and is electrically connected to the RF single module. The radiating body incorporates at least parts of the ground layer. Alternatively, the feed point is disposed on the sensing layer, and the radiating body incorporates at least parts of the sensing layer. Therefore, the radiating body is incorporated into the sensing layer or ground layer of the capacitive touch-sensing component and can save accommodating space.

Provided is a semiconductor package including a Si substrate, a drift layer, a buffer layer, an anode electrode, a trench, a semiconductor apparatus, an anode terminal, a cathode terminal, and a sealing resin.

According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.

A wireless communication device that has a circuit board, an RF signal module, a capacitive touch-sensing component and an antenna component is provided. The touch-sensing signal module is disposed on the circuit board. The capacitive touch-sensing component includes a sensing layer and a ground layer. The sensing layer is electrically connected to the touch-sensing signal module. The antenna component includes a feed point and a radiating body. The feed point is disposed on the ground layer and is electrically connected to the RF single module. The radiating body incorporates at least parts of the ground layer. Alternatively, the feed point is disposed on the sensing layer, and the radiating body incorporates at least parts of the sensing layer. Therefore, the radiating body is incorporated into the sensing layer or ground layer of the capacitive touch-sensing component and can save accommodating space.

Apparatus and methods for PIN diode switches for radio frequency electronic systems are provided herein. In certain configurations, a packaged switch including a packaging substrate including a die paddle and a thermally conductive substrate attached to the die paddle, one or more PIN diode switches attached to the thermally conductive substrate, and a driver chip attached to the die paddle and configured to generate a plurality of bias voltages operable to control biasing of the one or more PIN diode switches. The driver chip includes a switching regulator configured to generate a first bias voltage of the plurality of bias voltages and a charge pump configured to generate a second bias voltage of the plurality of bias voltages.

Apparatus and methods for radio frequency (RF) PIN diode switches are provided herein. In certain configurations, one or more PIN diode switches are integrated with a driver chip in a common package. The driver chip includes voltage regulators, such as switching regulators and/or charge pumps configured to generate voltage levels used to control biasing of the PIN diode switches. Thus, the packaged switch can operate using a single power supply voltage, which the voltage regulators of the driver chip use to generate biasing voltage levels used for controlling the PIN diode switches.