Patent classifications
H01L2924/12035
LIGHT EMITTING DEVICE
A light emitting device includes a substrate, a light emitting element, and a protective element. The substrate includes a support member and a plurality of wirings disposed on an upper surface of the support member. The substrate has a first side extending in a first direction and a second side opposite to the first side. The light emitting element is disposed on an upper surface of the substrate, and the protective element is disposed on the upper surface of the substrate. The plurality of wirings has a plurality of external connecting portions disposed adjacent to the first side and arranged in the first direction in a plan view. The protective element is disposed between the light emitting element and the second side of the substrate.
Optoelectronic device with a component which is surface-mounted on a frame support structure, and reflective composite material for such a device
An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D.sub.2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10.sup.−1 Ωmm.sup.2/m has been applied. The thickness (D.sub.9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).
ESD protection element
An ESD protection element includes a semiconductor substrate, a wiring layer, and an inductor conductor. The semiconductor substrate includes a Zener diode. The inductor conductor is provided on the wiring layer and has a two-dimensional spiral shape. The inductor conductor includes a first inductor conductor and a second inductor conductor that are continuously provided from an outer peripheral end toward an inner peripheral end, and a connection conductor portion in a vicinity of a portion at which the first inductor conductor and the second inductor conductor are connected to each other. The second inductor conductor has a width smaller than a width of the first inductor conductor.
LIGHT EMITTING DEVICE
A light emitting device includes a substrate, a light emitting element, and a light reflecting member. The substrate includes a pair of connection terminals on a first main surface. The light emitting element is connected to the connection terminals by a molten material. The light reflecting member covers the light emitting element. The connection terminals each has a protruding portion at a position connected to the light emitting element over the first main surface of the substrate, the protruding portion protruding toward the light emitting element. The molten material covers a side surface of the protruding portion of each of the connection terminals. The protruding portion of each of the connection terminals, the molten material, and a space between the substrate and the light emitting element are embedded by the light reflecting member.
LIGHT EMITTING DEVICE
A light emitting device includes a substrate, a light emitting element, and a light reflecting member. The substrate includes a pair of connection terminals on a first main surface. The light emitting element is connected to the connection terminals by a molten material. The light reflecting member covers the light emitting element. The connection terminals each has a protruding portion at a position connected to the light emitting element over the first main surface of the substrate, the protruding portion protruding toward the light emitting element. The molten material covers a side surface of the protruding portion of each of the connection terminals. The protruding portion of each of the connection terminals, the molten material, and a space between the substrate and the light emitting element are embedded by the light reflecting member.
Light emitting device
A light emitting device includes a substrate and a light emitting element mounted on the substrate, a light transmissive member, covering member, first and second protruding members, and a protective element. The light transmissive member is disposed on an upper surface of the light emitting element. The covering member covers an upper surface of the substrate, a lateral surface of the light emitting element, and at least a portion of a lateral surface of the light transmissive member such that an upper surface of the light transmissive member is exposed. The first protruding member and the second protruding member are provided on the substrate such that the light emitting element and the light transmissive member are positioned between the first protruding member and the second protruding member. The protective element is mounted on the substrate so as to be positioned between the light emitting element and the second protruding member.
Semiconductor light emitting device
A semiconductor light emitting device includes a main lead, a sub lead, a semiconductor light emitting element bonded to the main lead, and a protective element bonded to the sub lead, wherein the semiconductor light emitting element is connected to the main lead and the sub lead via a first wire and a second wire, respectively, wherein the protective element has a main surface electrode and a back surface electrode which is connected to the sub lead via a conductive bonding material, and wherein the main surface electrode of the protective element is connected to the main lead via a third wire, a connecting wiring which connects electrodes of the semiconductor light emitting element, and a connecting member including the second wire.
Illumination apparatus
An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.
Illumination apparatus
An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.
THERMALLY ENHANCED ELECTRONIC PACKAGES FOR GAN POWER INTEGRATED CIRCUITS
An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.