A light detecting element is realized in which a length thereof is reduced in a direction perpendicular to a direction in which light detecting regions are disposed side by side. A light detecting element includes a light detecting surface provided with a plurality of light detecting regions disposed side by side in a first direction and a plurality of wiring regions electrically connected to the plurality of light detecting regions. Of the plurality of wiring regions, a plurality of the wiring regions connected to a plurality of the light detecting regions are provided in an end region that is a region excluding a central region at the light detecting surface.

Optical sensor modules and methods of fabrication are described. In an embodiment, an optical component is mounted on a module substrate. In an embodiment, a pillar of stacked wireballs adjacent the optical component is used for vertical connection between the module substrate and a top electrode pad of the optical component.

A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

An optoelectronic device includes a first semiconductor die, having first front and rear surfaces and including at least one avalanche photodetector configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die has a second front surface, which is bonded to the first rear surface, and a second rear surface, and includes a photodetector receiver analog circuit coupled to the at least one avalanche photodetector and an emitter driver circuit configured to drive a pulsed optical emitter. A third semiconductor die has a third front surface, which is bonded to the second rear surface, and a third rear surface, and includes logic circuits coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.

A semiconductor package device, a wearable device, and a temperature detection method are provided. The semiconductor package includes a substrate, an optical module, and a temperature module. The optical module is disposed on the substrate. The temperature module is disposed on the substrate and adjacent to the optical module. The temperature module comprises a semiconductor element and a temperature sensor stacked on the semiconductor element. The optical module is configured to detect a distance between the optical module and an object.

A printed structure includes a destination substrate comprising two or more contact pads disposed on or in a surface of the destination substrate, a component disposed on the surface, and two or more electrically conductive connection posts. Each of the connection posts extends from a common side of the component. Each of the connection posts is in electrical and physical contact with one of the contact pads. The component is tilted with respect to the surface of the destination substrate. Each of the connection posts has a flat distal surface.

A display device according to one or more embodiments of the present disclosure includes a substrate, a first electrode and a second electrode on the substrate, a light emitting element electrically connected to the first electrode and the second electrode, and a first reflective layer on the light emitting element and including an opening overlapping the light emitting element, wherein the first reflective layer includes a material having a first reflectivity.

A method of manufacturing an optoelectronic device, including the steps of: a) forming a photonic device including a plurality of photonic components on a first substrate; b) forming an electronic device including a semiconductor layer coating a second substrate; c) after steps a) and b), bonding the electronic device to the photonic device by direct bonding, and then removing the second substrate; d) after step c), forming, on the upper surface side of the electronic device, electric connection metallizations, the method further including: —after step a) and before step c), a step of deposition of a metal layer continuously extending over the entire upper surface of the device.

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

IC chip package with silicon photonic features integrated onto an interposer along with electrical routing redistribution layers. An active side of an IC chip may be electrically coupled to a first side of the interposer through first-level interconnects. The interposer may include a core (e.g., of silicon or glass) with electrical through-vias extending through the core. The redistribution layers may be built up on a second side of the interposer from the through-vias and terminating at interfaces suitable for coupling the package to a host component through second-level interconnects. Silicon photonic features (e.g., of the type in a photonic integrated circuit chip) may be fabricated within a silicon layer of the interposer using high temperature processing, for example of 350° C., or more. The photonic features may be fabricated prior to the fabrication of metallized redistribution layers, which may be subsequently built-up within dielectric material(s) using lower temperature processing.