A semiconductor device transfer structure, a display apparatus, and a method of manufacturing the display apparatus are provided. The semiconductor device transfer structure includes: a substrate; an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device; and a transfer layer provided on the alignment layer and including a groove.

An electronic-element mounting package includes a wiring substrate having a first surface and a wiring pattern thereon; a base having a second surface and a through hole whose opening is on the second surface; a signal line penetrating the through hole and having a first end exposed from an opening of the through hole; and an insulating member between an inner surface of the through hole and the signal line and has an end portion and a main portion. The end portion has an end surface on a side of the opening of the through hole, and the main portion is farther from the opening of the through hole than the end portion. The electronic-element mounting package also has a conductive joining material with which the wiring pattern and the first end are joined. Permittivity of the end portion is larger than permittivity of the main portion.

Optical packages and methods of fabrication are described. In an embodiment, a controller chip is embedded along with optical components, including a photodetector (PD) and one or more emitters, in a single package.

A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a wiring structure and an interposer via electrically connected to the wiring structure; a plurality of semiconductor chips located on a first surface of the interposer and electrically connected to each other through the interposer; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface, wherein the plurality of semiconductor chips are electrically connected to the redistribution circuit structure through at least the interposer.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

The invention relates to methods of producing a cap substrate, to methods of producing a packaged radiation-emitting device at the wafer level, and to a radiation-emitting device. By producing a cap substrate, providing a device substrate in the form of a wafer including a multitude of radiation-emitting devices, arranging the substrates one above the other such that the substrates are bonded along an intermediate bonding frame, and dicing the packaged radiation-emitting devices, improved packaged radiation-emitting devices are provided which are advantageously arranged within a cavity free from organics and can be examined, still at the wafer level, in terms of their functionalities in a simplified manner prior to being diced.