An integrated circuit package includes a transmission line structure, wire bonds, a first post and a second post. The transmission line structure runs from a printed circuit board (PCB) to an integrated circuit (IC) and includes a center transmission line between two ground lines and sealed from exposure to air. The wire bonds connect the transmission line structure to pads on the integrated circuit from where the center transmission line exits the integrated circuit package. The wire bonds are selected to have an impedance matched to impedance of the integrated circuit. The first post supports the center transmission line where the center transmission line enters the integrated circuit package from the printed circuit board. The second post supports the center transmission line where the center transmission line exits the integrated circuit package to connect to the wire bonds.

A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.

A method for manufacturing a semiconductor component including: providing a flat carrier with an upper side and a lower side, the carrier including a continuous opening that runs between the upper side and the lower side; providing a semiconductor arrangement that includes a semiconductor chip that includes electrically and/or optically active regions on a lower side; arranging the semiconductor arrangement in the opening such that a lower side of the semiconductor arrangement and the lower side of the carrier run in a common plane; casting the semiconductor arrangement with a potting compound, such that the semiconductor arrangement is materially connected to the carrier; and thinning out the semiconductor system by way of grinding from above, such that an upper side of the carrier and an upper side of the semiconductor arrangement run in a common plane.

A semiconductor chip is mounted on a mounting substrate. The semiconductor chip includes plural first bumps on a surface facing the mounting substrate. The plural first bumps each have a shape elongated in a first direction in plan view and are arranged in a second direction perpendicular to the first direction. The mounting substrate includes, on a surface on which the semiconductor chip is mounted, at least one first land connected to the plural first bumps. At least two first bumps of the plural first bumps are connected to each first land. The difference between the dimension of the first land in the second direction and the distance between the outer edges of two first bumps at respective ends of the arranged first bumps connected to the first land is 20 m or less.

A packaged semiconductor device includes a substrate having a ground plane, a first communication port on the substrate, a second communication port on the substrate adjacent the first communication port, and grounding structures on the substrate. Each of the grounding structures is in contact with two different locations on the ground plane and is adjacent to one of the first and second communication ports. An electrically insulating material completely covers a top side of each of the grounding structures.

A multilayer wiring board includes a first insulating layer, a second insulating layer stacked on the first insulating layer, a via conductor inside each of the first insulating layer and the second insulating layer, and a conductive bonding layer that bonds the via conductors to each other. The first insulating layer is directly bonded to the second insulating layer, and a relationship a.sub.1>b.sub.1 is satisfied, where a.sub.1 is a maximum diameter of the bonding layer and b.sub.1 is a maximum diameter of the via conductor at an interface with the bonding layer.

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

A printed wiring board includes conductor layers, a core layer having an opening, and a build-up layer. A high frequency device placed within the opening is installed such that a mirror surface is thermally connected to a conductor layer for heat dissipation facing the opening from a lower surface side of the core layer, and terminals on the terminal surface are electrically connected to conductor layers formed on an upper surface side of the core layer.

An electronic device includes a multilevel package substrate, a semiconductor die, and a package structure, the multilevel package substrate having a first level, a second level, and a filter circuit in the first and second levels. The filter circuit includes a filter input terminal, a first capacitor, a first inductor, a second capacitor, a second inductor, a filter output terminal, and a reference terminal. The semiconductor die is attached to the multilevel package substrate and has a conductive structure coupled to one of the terminals of the filter circuit, and the package structure encloses the semiconductor die and a portion of the multilevel package substrate.

A wireless module includes: a substrate having a first surface and a second surface, the second surface being an opposite surface of the substrate from the first surface; an antenna located on the first surface; an electronic circuit that is located on the first surface and/or the second surface, and outputs a high-frequency signal to the antenna and/or receives a high-frequency signal from the antenna; and a foamed resin located on the first surface so as to seal the antenna.