A printed circuit board includes: a printed wiring board including an insulating layer wherein a recessed part is provided on a top surface of the insulating layer, and a printed conductor provided inside the recessed part; a bare chip part mounted in the recessed part and electrically connected to the printed conductor; an electronic part mounted on the top surface of the printed wiring board other than the recessed part; and a cap fixed to the top surface of the printed wiring board and hollow-sealing the bare chip part mounted in the recessed part, wherein using a height of the top surface of the printed wiring board as a reference, a height of a top surface of the cap is equal to or below a maximum height of a top surface of the electronic part.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

An electronic device includes a mount board, first and second electronic components flip-chip mounted on a surface of the mount board with bumps interposed therebetween, and a sealing member that seals the first and second electronic components on the mount board. A thickness of the first electronic component is larger than a thickness of the second electronic component, and a height of the bump bonded to the first electronic component is smaller than a height of the bump bonded to the second electronic component.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

An electronic device assembly includes a cavity formed from two portions and includes a reflector configured to reflect wireless signals that lines the cavity. A first portion of the cavity is formed within a carrier substrate and a second portion of the cavity is formed by an electrically conductive structure bonded to the carrier substrate above the first portion. The second portion is encapsulated by molding material disposed on the carrier substrate. An antenna structure is disposed at one end of the cavity and oriented toward the reflector. The antenna structure is electrically coupled to an electronic device bonded to the carrier substrate that is also encapsulated by the molding material.

An electric package device is provided, including a first chip and a second chip. The first chip includes a first conductive pad. The second chip includes a second conductive pad. The second conductive pad couples to the first conductive pad through a connection wire. In some embodiments, the first chip includes a first signal control circuit that receives, in response to a selection signal, one of multiple input signals as a first signal, filters the first signal, and outputs the filtered first signal, as a second signal, from the first conductive pad to the second conductive pad.

A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film. Each of the plurality of resistive films extends in a first direction in plan view. The plurality of resistive films are arranged spaced apart in a second direction orthogonal to the first direction in plan view. The plurality of resistive films are divided into a first group, a second group, and a third group. The first group is located between the second group and the third group in the second direction. A second width variation amount of each of the plurality of second resistive films belonging to the second group and a third width variation amount of each of the plurality of third resistive films belonging to the third group are larger than a first width variation amount of each of the plurality of first resistive films belonging to the first group.

An electronic device includes a multilevel package substrate, a semiconductor die, and a package structure, the multilevel package substrate having a first level, a second level, and a filter circuit in the first and second levels. The filter circuit includes a filter input terminal, a first capacitor, a first inductor, a second capacitor, a second inductor, a filter output terminal, and a reference terminal. The semiconductor die is attached to the multilevel package substrate and has a conductive structure coupled to one of the terminals of the filter circuit, and the package structure encloses the semiconductor die and a portion of the multilevel package substrate.

An electronic device including a connection element is provided. The connection element includes a first insulation layer and a second insulation layer. The first insulation layer has a first opening. A sidewall of the first insulation layer at the first opening has roughness different from roughness of a top surface of the first insulation layer. The second insulation layer is disposed on the first insulation layer, and the second insulation layer has a second opening. The sidewall of the first insulation layer at the first opening is exposed by the second opening. A method of fabricating an electronic device is also provided.