The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.

The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

In some examples, a device comprises at least two semiconductor die, wherein each respective semiconductor die of the at least two semiconductor die comprises at least two power transistors, an input node on a first side of the respective semiconductor die, a reference node on the first side of the respective semiconductor die, and a switch node on a second side of the respective semiconductor die. The device further comprises a first conductive element electrically connected to the respective input nodes of the at least two semiconductor die. The device further comprises a second conductive element electrically connected to the respective reference nodes of the at least two semiconductor die.

A semiconductor element, a substrate on which the semiconductor element is mounted, a connecting portion formed constituted by an arrangement of a plurality of wirings, a casing in which the substrate is disposed on a side of a bottom surface thereof and the semiconductor element and the connecting portion are accommodated therein, and an insulating sealing material filled in the casing, are provided. The plurality of wirings constituting the connecting portion are aligned in a loop shape in a same direction, and each height thereof is arranged such that each of the wiring has a height which is gradually increased one after another toward one direction in the arrangement.

According to the present invention, a power module includes an insulating substrate, a semiconductor device provided on the insulating substrate, an internal terminal provided on the insulating substrate and electrically connected to the semiconductor device, a sealing material that seals the internal terminal, the semiconductor device and the insulating substrate so that an end portion of the internal terminal is exposed, a case that is separate from the sealing material and covers the sealing material and an elastic member that connects the case and the end portion of the internal terminal.

A self-powered electronic system comprises a first chip of single-crystalline semiconductor embedded in a second chip of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container bordered by ridges. The flat side of the slab includes a heavily n-doped region forming a pn-junction with the p-type bulk. A metal-filled deep silicon via through the p-type ridge connects the n-region with the terminal on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

An electrical apparatus includes a semiconductor element, conductors and a covering resin. The conductors are connected to the semiconductor element. At least one of the conductors extends in a first direction. The covering resin covers the semiconductor element and a portion of each of the conductors. The conductors respectively include covering portions and exposing portions. Each of the covering portions is covered by the covering resin. Each of the exposing portions is exposed from the covering resin. The conductors are aligned in a second direction. Two of the exposing portions closest to each other are spaced apart in each of the second direction and a third direction. The third direction is perpendicular to the first direction and the second direction. A shortest separation distance between two closest covering portions is shorter than a shortest separation distance between two closest exposing portions.

A semiconductor module includes a base plate for dissipating heat and a body having a bottom surface facing the base plate, a top surface opposite the bottom surface, and side surfaces between the bottom and top surfaces, wherein a first main electrode through which a first main current flows faces a first side surface among the side surfaces, and a second main electrode through which a second main current flows faces a second side surface opposite the first side surface. A power conversion apparatus includes a plurality of the semiconductor modules, wherein a cylindrical section is formed by arranging the semiconductor modules to surround a predetermined position, some of the first and second main electrodes are arranged on a first ring-shaped end surface at one end of the cylindrical section, and remaining electrodes are arranged on a second ring-shaped end surface at another end of the cylindrical section.