A semiconductor structure, including a substrate and multiple chips, is provided. The chips are stacked on the substrate. Each of the chips has a first side and a second side opposite to each other. Each of the chips includes a transistor adjacent to the first side and a storage node adjacent to the second side. Two adjacent chips are bonded to each other. The transistor of one of the two adjacent chips is electrically connected to the storage node of the other one of the two adjacent chips to form a memory cell.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

A semiconductor package includes a wiring structure that includes a first insulating layer and a first conductive pattern inside the first insulating layer, a first semiconductor chip disposed on the wiring structure, an interposer that includes a second insulating layer, a second conductive pattern inside the second insulating layer, and a recess that includes a first sidewall formed on a first surface of the interposer that faces the first semiconductor chip and a first bottom surface connected with the first sidewall, where the recess exposes at least a portion of the second insulating layer, a first element bonded to the interposer and that faces the first semiconductor chip inside the recess, and a mold layer that covers the first semiconductor chip and the first element.

Disclosed is a semiconductor package comprising a first chip stack including on a substrate a plurality of first semiconductor chips in an offset stack structure and stacked to expose a connection region at a top surface of each of the first semiconductor chips, a second semiconductor chip on the substrate and horizontally spaced apart from the first chip stack, a spacer on the second semiconductor chip, and a second chip stack including third semiconductor chips in an offset stack structure on the first chip stack and the spacer. Each of the first semiconductor chips includes a first chip pad on the connection region and a first wire that extends between the first chip pad and the substrate. The first wire of an uppermost one of the first semiconductor chips is horizontally spaced apart from a lowermost one of the third semiconductor chips.

A die includes one or more power delivery layers to deliver power within the die. Additionally, the die also includes one or more transistor layers to at least partially implement a programmable fabric for the die. Furthermore, the die further includes one or more signal routing layers to transmit signals for use by the programmable fabric. Moreover, the one or more transistor layers physically separate the one or more power delivery layers from the one or more signal routing layers.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

A package structure includes the following: a logic die; and a plurality of core dies sequentially stacked on the logic die along a vertical direction, in which the plurality of core dies include a first core die and a second core die interconnected through a hybrid bonding member; the hybrid bonding member includes: a first contact pad located on a surface of the first core die; and a second contact pad located on a surface of the second core die; the first contact pad is in contact bonding with the second contact pad.

A semiconductor package structure includes a control unit and a memory unit. The control unit includes a first wafer and a second wafer that are vertically stacked. The memory unit is disposed on the second wafer of the control unit. The memory unit includes multiple third wafers and a fourth wafer that are stacked vertically. The memory unit overlaps the control unit in a normal direction of the semiconductor package structure. In addition, a manufacturing method of the semiconductor package structure is provided.

A semiconductor package includes a second semiconductor chip disposed on a first semiconductor chip. The first semiconductor chip includes a first semiconductor substrate, a through via, and a lower pad disposed on the through via. The lower pad includes a first segment and a second segment connected thereto. The first segment overlaps the through via. The second segment is disposed on an edge region of the first segment. The second segment has an annular shape. The second semiconductor chip includes a second semiconductor substrate, an upper pad disposed on a bottom surface of the second semiconductor substrate, and a connection terminal disposed between the upper and lower pads. The second segment at least partially surrounds a lateral surface of the upper pad. A level of a top surface of the second segment is higher than that of an uppermost portion of the connection terminal.

A semiconductor structure includes an alternating stack of insulating layers and composite layers. Each of the composite layers includes a plurality of electrically conductive word line strips laterally extending along a first horizontal direction and a plurality of dielectric isolation strips laterally extending along the first horizontal direction and interlaced with the plurality of electrically conductive word line strips. Rows of memory openings are arranged along the first horizontal direction. Each row of memory openings vertically extends through each insulating layer within the alternating stack and one electrically conductive strip for each of the composite layers. Rows of memory opening fill structures are located within the rows of memory openings. Each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel.