A housing for accommodating an electronic component of an electronic assembly includes a base and a cover, wherein the base and the cover are connected to one another by a hinge element and the base and the cover of the housing can be folded together by means of the hinge element. At least one leadframe has conductor tracks arranged in the housing, wherein at least one conductor track of the leadframe is arranged in the base of the housing and at least one further conductor track is arranged in the cover of the housing, and wherein the at least one further conductor track extends starting from the base of the housing, via the hinge element, to the cover of the housing.

A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

The power on wafer assembly can include: a compliant connector, an integrated circuit, a printed circuit board (PCB), a power component, and a set of compliant connectors. The power on wafer assembly can optionally include: a compression element, a cooling system, a set of mechanical clamping components, and a power source. However, the power on wafer assembly can additionally or alternately include any other suitable components.

A three-phase switching unit including three identical switching cells, each including a first switch and a second switch electrically in series, including a substrate having: a first level receiving, on conductive areas, back sides of integrated circuits forming said switches; and at least one second level comprising conductive areas of interconnection of vias between the first and second levels, the conductive areas of the different levels respecting a symmetry of revolution of order 3.

Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.

An extension of conventional IC fabrication processes to include some of the concepts of flip-chip assemblies while producing a final non-flip chip circuit structure suitable for conventional packaging or for direct usage by customers. Multiple IC dies are fabricated on a semiconductor wafer in a conventional fashion, solder bumped or the like, and singulated. The singulated dies, which may be of different sizes and functionality, are then flip-chip assembled onto a single tile substrate of thin-film material which has been patterned with vias, peripheral connection pads, and one or more ground planes. Once dies are flip-chip mounted to the thin-film tile, all of the dies on the entire tile may be probed using automated testing equipment. Sets of dies of different functionality may be tested as a system or subsystem. Once test probing is complete, the dies (or sets of dies) and tile are singulated into die/tile assemblies.

The power on wafer assembly can include: a compliant connector, an integrated circuit, a printed circuit board (PCB), a power component, and a set of compliant connectors. The power on wafer assembly can optionally include: a compression element, a cooling system, a set of mechanical clamping components, and a power source. However, the power on wafer assembly can additionally or alternately include any other suitable components.

A film package includes a film substrate, a first semiconductor chip on a first surface of the film substrate, a second semiconductor chip on the first surface of the film substrate, and a first conductive film on the first surface of the film substrate. The first conductive film covers the first semiconductor chip and the second semiconductor chip and includes a slit(s) or a notch(es). The slit(s) or notch(es) is/are disposed in a bridge region between the first semiconductor chip and the second semiconductor chip, in a plan view of the package.