The present disclosure relates to a chip scale package (CSP) comprising: a first set of CSP contact balls or bumps; a second set of CSP contact balls or bumps; and a channel routing region, the channel routing region being devoid of any CSP contact balls or bumps.

A terahertz device of the present invention includes a terahertz element generating an electromagnetic wave, a dielectric including a dielectric material and surrounding the terahertz element, a gas space including a gas, and a reflecting film serving as a reflecting portion. The reflecting film includes a portion opposing the terahertz element through the dielectric and the gas space and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element and transmitted through the dielectric and the gas space. In addition, the refractive index of the dielectric is lower than the refractive index of the terahertz element and is higher than the refractive index of the gas in the gas space.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.

A method of forming a semiconductor package includes the following steps. A redistribution layer structure is formed over a first die and a dummy die, wherein the redistribution layer structure is directly electrically connected to the first die. An insulating layer is formed, wherein the insulating layer is disposed opposite to the redistribution layer structure with respect to the first die. At least one thermal through via is formed in the insulating layer.

Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31. Terahertz element 11 is conductively bonded to wiring layer 32.

An electronic element, a circuit board with an electronic element, and an electronic device are provided. The electronic element includes a substrate and a first input pad, at least one chip, and a first output pad that are disposed on a first surface of the substrate, where the first input pad, the at least one chip, and the first output pad are sequentially connected, the first input pad and the first output pad are directly disposed on the first surface of the substrate, and a surface of the first input pad facing away from the substrate and a surface of the first output pad facing away from the substrate constitute a partial area of an outer surface of the electronic element.

The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.

A terahertz device of the present invention includes a terahertz element generating an electromagnetic wave, a dielectric including a dielectric material and surrounding the terahertz element, a gas space including a gas, and a reflecting film serving as a reflecting portion. The reflecting film includes a portion opposing the terahertz element through the dielectric and the gas space and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element and transmitted through the dielectric and the gas space. In addition, the refractive index of the dielectric is lower than the refractive index of the terahertz element and is higher than the refractive index of the gas in the gas space.

Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. The terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor.

The present disclosure relates to a chip scale package (CSP) comprising: a first set of CSP contact balls or bumps; a second set of CSP contact balls or bumps; and a channel routing region, the channel routing region being devoid of any CSP contact balls or bumps.