A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

An apparatus is provided which comprises: one or more first conductive contacts on a first substrate surface, one or more second conductive contacts on a second substrate surface opposite the first substrate surface, a core layer comprising glass between the first and the second substrate surfaces, and one or more thin film capacitors on the glass core conductively coupled with one of the first conductive contacts and one of the second conductive contacts, wherein the thin film capacitor comprises a first metal layer on a surface of the glass core, a thin film dielectric material on a surface of the first metal layer, and a second metal layer on a surface of the thin film dielectric material. Other embodiments are also disclosed and claimed.

A semiconductor device has a conductive via in a first surface of a substrate. A first interconnect structure is formed over the first surface of the substrate. A first bump is formed over the first interconnect structure. The first bump is formed over or offset from the conductive via. An encapsulant is deposited over the first bump and first interconnect structure. A portion of the encapsulant is removed to expose the first bump. A portion of a second surface of the substrate is removed to expose the conductive via. The encapsulant provides structural support and eliminates the need for a separate carrier wafer when thinning the substrate. A second interconnect structure is formed over the second surface of the substrate. A second bump is formed over the first bump. A plurality of semiconductor devices can be stacked and electrically connected through the conductive via.

A method is provided and includes forming a first conductive pattern; forming a photosensitive layer on the first conductive pattern, the photosensitive layer having a first through hole exposing a portion of the first conductive pattern; forming a first via in the first through hole; removing the photosensitive layer; forming a dielectric layer encapsulating the first conductive pattern and the first via, the dielectric layer exposing a top surface of the first via; forming a second conductive pattern on the top surface of the first via, forming a dielectric layer covering the second conductive pattern; etching the dielectric layer to form a second through hole that exposes a portion of the second conductive pattern; forming a second via filling the second through hole and an under bump pad on the second via; and mounting a semiconductor chip on the under bump pad using a connection terminal.

A communication interface structure for connection between dies is provided, including a memory die, processing dies and interconnection routings. The memory die includes a first interface edge, wherein the first interface edge is split into a plurality of interface groups. Each of the processing dies includes a second interface edge. Interconnection routings respectively connect the second interface edges of the processing dies to the interface groups of the memory die.

Fabric may include one or more conductive strands. An insertion tool may insert an electrical component into the fabric during formation of the fabric. The electrical component may include an electrical device mounted to a substrate and encapsulated by a protective structure. An interconnect structure such as a metal via or printed circuit layers may pass through an opening in the protective structure and may be used to couple a conductive strand to a contact pad on the substrate. The protective structure may be transparent or may include an opening so that light can be detected by or emitted from an optical device on the substrate. The protective structure may be formed using a molding tool that provides the protective structure with grooves or may be molded around a hollow conductive structure to create grooves. An electrical component mounted to the fabric may be embedded within printed circuit layers.

A circuit module includes an interposer, and the interposer includes an element body including a first surface, a first interposer terminal provided on the first surface of the element body, and connected to a first external element, a second interposer terminal provided on the first surface of the element body, and connected to a second external element, a first wiring provided in the element body, and electrically connecting the first interposer terminal and the circuit board with each other, a second wiring provided in the element body, and electrically connecting the second interposer terminal and the circuit board with each other, and a bypass wiring provided in the element body and/or on a surface of the element body, and electrically connecting the first interposer terminal and the second interposer terminal with each other.

A semiconductor package includes a redistribution structure including an insulating layer and a redistribution layer on the insulating layer, and having a first surface and a second surface opposing the first surface, and an under-bump metal (UBM) structure including an UBM pad protruding from the first surface of the redistribution structure, and an UBM via penetrating through the insulating layer and connecting the redistribution layer and the UBM pad. A lower surface of the UBM via has a first area in contact with the UBM pad, and a second area having a step configuration relative to the first area and that extends outwardly of the first area.

Systems and methods are described for transmitting data over physical channels to provide a high bandwidth, low latency interface between integrated circuit chips with low power utilization. Communication is performed using group signaling over multiple wires using a vector signaling code, where each wire carries a low-swing signal that may take on more than two signal values.

A system on package SoP module includes a printed circuit board (PCB) having a first side and an opposing second side, a first IC attached to the first side, a second IC attached to the second side. The PCB also provides electrical paths for connecting the first IC and the second IC. Conductors by which the second IC is attached to the PCB also allow for electrical testing of the first IC when the SoP is in a system level state.