A substrate panel structure includes a plurality of sub-panels and a dielectric portion. Each of the sub-panels includes a plurality of substrate units. The dielectric portion is disposed between the sub-panels.

An apparatus is provided comprising: first die, wherein a first plurality of interconnect structures is formed on the first die; one or more layers, wherein a first surface of the one or more layers is attached to the first plurality of interconnect structures; a second plurality of interconnect structures formed on a second surface of the one or more layers; and a second die, wherein a third plurality of interconnect structures is formed on the second die, wherein a first interconnect structure of the first plurality of interconnect structures is electrically connected to a second interconnect structure of the second plurality of interconnect structures through the one or more layers, and wherein the first die is mounted on the second die such that the second interconnect structure of the second plurality of interconnect structures is attached to a third interconnect structure of the third plurality of interconnect structures.

A semiconductor package includes a semiconductor chip and a package substrate. The package substrate includes a base layer, a first group of conductive lines disposed on a first surface of the base layer, and a second group of conductive lines disposed on a second surface of the base layer and electrically connected to respective ones of the first group of conductive lines. The package substrate further includes a plating lead line connected to one of the first group of conductive lines, opening holes located between remaining portions of the second group of conductive lines to separate the second group of conductive lines from each other.

Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

An object of the present invention is to improve the degree of freedom in the wiring design of a wiring substrate configuring a semiconductor device. Lands having an NSMD structure and a land-on-through-hole structure are arranged at positions not overlapping with a plurality of leads arranged on a chip loading surface of a wiring substrate in transparent plan view on the outer peripheral side of a mounting surface of the wiring substrate configuring a semiconductor device having a BGA package structure. On the other hand, land parts having the NSMD structure and to which lead-out wiring parts are connected are arranged at positions overlapping with the leads arranged on the chip loading surface of the wiring substrate in transparent plan view on the inner side than the group of lands in the mounting surface of the wiring substrate.

To enhance reliability in assembling a semiconductor device. There is provided a wiring substrate including a target mark, which is not provided on an extension line of a dicing region provided between a first semiconductor device region and a second semiconductor device region but is provided between the extension line of the dicing region and a first imaginary extension line of a first outermost peripheral land row and between the extension line of the dicing region and a second imaginary extension line of a second outermost peripheral land row. Furthermore, after mounting a semiconductor chip, wire bonding is performed, resin sealing is performed and a solder ball is mounted. After that, the dicing region is specified on the basis of the target mark, and the wiring substrate is cut along the dicing region.

To enhance reliability in assembling a semiconductor device. There is provided a wiring substrate including a target mark, which is not provided on an extension line of a dicing region provided between a first semiconductor device region and a second semiconductor device region but is provided between the extension line of the dicing region and a first imaginary extension line of a first outermost peripheral land row and between the extension line of the dicing region and a second imaginary extension line of a second outermost peripheral land row. Furthermore, after mounting a semiconductor chip, wire bonding is performed, resin sealing is performed and a solder ball is mounted. After that, the dicing region is specified on the basis of the target mark, and the wiring substrate is cut along the dicing region.

An object of the present invention is to improve the degree of freedom in the wiring design of a wiring substrate configuring a semiconductor device. Lands having an NSMD structure and a land-on-through-hole structure are arranged at positions not overlapping with a plurality of leads arranged on a chip loading surface of a wiring substrate in transparent plan view on the outer peripheral side of a mounting surface of the wiring substrate configuring a semiconductor device having a BGA package structure. On the other hand, land parts having the NSMD structure and to which lead-out wiring parts are connected are arranged at positions overlapping with the leads arranged on the chip loading surface of the wiring substrate in transparent plan view on the inner side than the group of lands in the mounting surface of the wiring substrate.

A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.