Disclosed are structures and methods related to metallization of a doped gallium arsenide (GaAs) layer. In some embodiments, such metallization can include a tantalum nitride (TaN) layer formed on the doped GaAs layer, and a metal layer formed on the TaN layer. Such a combination can yield a Schottky diode having a low turn-on voltage, with the metal layer acting as an anode and an electrical contact connected to the doped GaAs layer acting as a cathode. Such a Schottky diode can be utilized in applications such as radio-frequency (RF) power detection, reference-voltage generation using a clamp diode, and photoelectric conversion. In some embodiments, the low turn-on Schottky diode can be fabricated utilizing heterojunction bipolar transistor (HBT) processes.

A semiconductor package includes a substrate including a first bonding pad and a first conductive pattern positioned at the same level and in contact with the first bonding pad; a lower semiconductor chip and an upper semiconductor chip stacked over the substrate, the lower and upper semiconductor chips respectively including a first lower chip pad and a first upper chip pad; a first lower bonding wire with first and second ends respectively connected to the first bonding pad and the first lower chip pad; and a first upper bonding wire with a first end connected to the first bonding pad and a second end connected to the first upper chip pad, the first end of the first upper bonding wire is located farther from the lower and upper semiconductor chips and closer to the first conductive pattern than the first end of the first lower bonding wire.

Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

To protect a plurality of semiconductor chips of a sawn wafer housed in a shipping case and a method of manufacturing a semiconductor device includes a step of vacuum packing a sawn wafer while being housed in a shipping case; the shipping case has the following structure: the shipping case has a lid portion that covers the upper surface of the sawn wafer and a body portion that covers the lower surface of the sawn wafer, the lid portion has a recess portion that covers a plurality of semiconductor chips and a ventilation route communicated with the recess portion. In a step of reducing pressure in the shipping case, a gas in the shipping case is discharged outside via a ventilation route.

A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.

An electronic device includes a carrier substrate, a first electronic chip and a second chip. The first chip is mounted on the carrier substrate via interposed electrical connection elements electrically connecting a front electrical connection network of the first chip and an electrical connection network of the carrier substrate. The second chip is mounted on the first chip via interposed electrical connection elements electrically connecting a front electrical connection network of the second chip and a back electrical connection network of the first chip Electrical connection wires electrically connect the back electrical connection network of the first chip to the electrical connection network of the carrier substrate.

A semiconductor device including a substrate including a chip region and an edge region; integrated circuit elements on the chip region; an interlayer insulating layer covering the integrated circuit elements; an interconnection structure on the interlayer insulating layer and having a side surface on the edge region; a first and second conductive pattern on the interconnection structure, the first and second conductive patterns being electrically connected to the interconnection structure; a first passivation layer covering the first and second conductive patterns and the side surface of the interconnection structure; and a second passivation layer on the first passivation layer, wherein the second passivation layer includes an insulating material different from the first passivation layer, and, between the first and second conductive patterns, the second passivation layer has a bottom surface that is located at a vertical level lower than a top surface of the first conductive pattern.

CTE compensation for wafer-level and chip-scale packages and assemblies.

A semiconductor package includes a first sub-semiconductor package, an interposer substrate, and a second sub-semiconductor package that are sequentially stacked. The first sub-semiconductor package includes a first package substrate, a first semiconductor device, and a first mold member that are sequentially stacked, and the interposer substrate includes at least one hole. The first mold member includes: a mold main portion which covers the first semiconductor device; a mold connecting portion extended from the mold main portion and inserted into the at least one hole; and a mold protruding portion extended from the mold connecting portion to cover a top surface of the interposer substrate outside the at least one hole. The mold main portion, the mold connecting portion, and the mold protruding portion constitute a single object.

The present disclosure provides a packaging structure and a packaging method for an antenna. The packaging structure comprises a redistribution layer, having a first surface and an opposite second surface; a first metal joint pin, formed on the second surface of the redistribution layer; a first packaging layer, disposed on the redistribution layer covering the first metal joint pin; a first antenna metal layer, patterned on the first packaging layer, and a portion of the first antenna metal layer electrically connects with the first metal joint pin; a second metal joint pin, formed on the first antenna metal layer; a second packaging layer, disposed on the first antenna metal layer covering the second metal joint pin; a second antenna metal layer, formed on the second packaging layer; and a metal bump and an antenna circuit chip, bonded to the first surface of the redistribution layer.