A PoP semiconductor device has a top semiconductor package disposed over a bottom semiconductor package. The top semiconductor package has a substrate and a first semiconductor die disposed over the substrate. First and second encapsulants are deposited over the first semiconductor die and substrate. A first build-up interconnect structure is formed over the substrate after depositing the second encapsulant. The top package is disposed over the bottom package. The bottom package has a second semiconductor die and modular interconnect units disposed around the second semiconductor die. A second build-up interconnect structure is formed over the second semiconductor die and modular interconnect unit. The modular interconnect units include a plurality of conductive vias and a plurality of contact pads electrically connected to the conductive vias. The I/O pattern of the build-up interconnect structure on the top semiconductor package is designed to coincide with the I/O pattern of the modular interconnect units.

A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first conductive layer is formed with an antenna over a first surface of the encapsulant. A second conductive layer is formed with a ground plane over a second surface of the encapsulant with the antenna located within a footprint of the ground plane. A conductive bump is formed on the ground plane. A third conductive layer is formed over the first surface of the encapsulant. A fourth conductive layer is formed over the second surface of the encapsulant. A conductive via is disposed adjacent to the semiconductor die prior to depositing the encapsulant. The antenna is coupled to the semiconductor die through the conductive via. The antenna is formed with the conductive via between the antenna and semiconductor die. A PCB unit is disposed in the encapsulant.

A method of making a semiconductor device can include providing a temporary carrier with adhesive. A first semiconductor die and a second semiconductor die can be mounted face up to the temporary carrier such that back surfaces of the first semiconductor die and the second semiconductor die are depressed within the adhesive. An embedded die panel can be formed by encapsulating at least four sides surfaces and an active surface of the first semiconductor die, the second semiconductor die, and side surfaces of the conductive interconnects in a single step. The conductive interconnects of the first semiconductor die and the second semiconductor die can be interconnected without a silicon interposer by forming a fine-pitch build-up interconnect structure over the embedded die panel to form at least one molded core unit. The at least one molded core unit can be mounted to an organic multi-layer substrate.

Disclosed are EMI shielded packages, electronic device packages, and related methods. EMI shielded packages are formed by applying an insulating material to a first side of a substrate strip, separating the substrate strip into segments, adhering the insulating material of the segments to a solid conductor, applying a conductive paste around lateral sides of the segments, curing the conductive paste, and cutting through the conductive paste and the solid conductor to form the EMI packages. An electronic device package includes a substrate including electronic circuitry, an EMI shield, and an insulating material insulating the substrate from the EMI shield. The EMI shield includes a solid conductor adhered to the insulating material, and a cured conductive paste at least partially surrounding a lateral edge of the substrate. The cured conductive paste electrically connects the solid conductor to a conductive terminal in a lateral side of the substrate.

A sensor package structure includes a substrate, a sensor chip disposed on the substrate, several metal wires electrically connected to the substrate and the sensor chip, a translucent layer corresponding in position to the sensor chip, and an adhesive. A top surface of the sensor chip has a sensing region and a spacing region around the sensing region. The sensor chip includes several connecting pads arranged on a first portion of the top surface between the first edge and the spacing region, and a second portion of the top surface between the second edge and the spacing region is provided without any connecting pad. The width of the first portion is greater than that of the second portion. The adhesive covers the surrounding side of the sensor chip, the first portion, and the surrounding side of the translucent layer. Part of each metal wire is embedded in the adhesive.

At least some example embodiments provide a fingerprint sensor, a fingerprint sensor package, and a fingerprint sensing system using light sources of a display panel. The fingerprint sensor includes an image sensor including a plurality of sensor pixels, the sensor pixels configured to sense light reflected by a fingerprint and generate image information corresponding to the fingerprint and a pinhole mask defining a plurality of pinholes, wherein each of the pinholes forms a focus for transmitting the light reflected by the fingerprint to the image sensor, wherein light is emitted from a plurality of organic light-emitting diodes (OLEDs) and is reflected by the fingerprint.

A semiconductor package is provided, which includes a first die and a second die. The first die includes a first section of a power converter, and the second die includes a second section of the power converter. The power converter may include a plurality of switches, and a Power Management (PM) circuitry to control operation of the power converter by controlling switching of the plurality of switches. The PM circuitry may include a first part and a second part. The first section of the power converter in the first die may include the first part of the PM circuitry, and the second section of the power converter in the second die may include the second part of the PM circuitry.

A method of reducing heat flow between IC chips and the resulting device are provided. Embodiments include attaching plural IC chips to an upper surface of a substrate; forming a lid over the IC chips; and forming a slit through the lid at a boundary between adjacent IC chips.

A semiconductor device package includes a substrate, a first solder paste, an electrical contact and a first encapsulant. The substrate includes a conductive pad. The first solder paste is disposed on the pad. The electrical contact is disposed on the first solder paste. The first encapsulant encapsulates a portion of the electrical contact and exposes the surface of the electrical contact. The electrical contact has a surface facing away from the substrate. A melting point of the electrical contact is greater than that of the first solder paste. The first encapsulant includes a first surface facing toward the substrate and a second surface opposite to the first surface. The second surface of the first encapsulant is exposed to air.

Provided is a semiconductor package including an interposer. The semiconductor package includes: a package base substrate; a lower redistribution line structure disposed on the package base substrate and including a plurality of lower redistribution line patterns; at least one interposer including a plurality of first connection pillars spaced apart from each other on the lower redistribution line structure and connected respectively to portions of the plurality of lower redistribution line patterns, and a plurality of connection wiring patterns; an upper redistribution line structure including a plurality of upper redistribution line patterns connected respectively to the plurality of first connection pillars and the plurality of connection wiring patterns, on the plurality of first connection pillars and the at least one interposer; and at least two semiconductor chips adhered on the upper redistribution line structure while being spaced apart from each other.